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- Analysis of Interconnect Power Consumption for Multi-Chip Module 多芯片组件互连的功耗分析
- MCM Interconnect Power Consumption in an S-domain RLC Transmission Line Model 基于S域RLC传输线模型的多芯片组件互连功耗计算
- interconnect power consumption 互连功耗
- As the line width of the metal interconnect reduces, the performance of an IC chip can be degraded by interconnect RC delay and power consumption. 因此，当导线的线宽逐渐缩小后，晶片的效能将主要受限于后段制程的内连线延迟与耗损。
- Not bad. What about power consumption? 不错，年用电量是多少?
- Inspiratory capacity and low power consumption. 吸气量大、功耗低。
- Fast data transmission and low power consumption. 传输数据速度快，功耗底。
- Both are efforts to manage PC power consumption. 两者都是努力处理个人计算机耗电量。
- Will "staggered power consumption program" occur? 是否会发生“错锋用电”的情形?
- Power consumption 36-68W. 100% CFC and HFC-free. 功率消耗36 - 68瓦特。
- Power consumption (serial): 65 mA (Max. 功率消耗（串行）：65毫安（最大值）
- Power consumption (parallel): 100 mA (Max. 功率消耗（并行）：100毫安（最大值）
- A power consumption equation of MCM(Multi-Chip Module) interconnect is presented in an S-domain RLC transmission line model. Simulation results are shown to verify the theoretical analysis. 为了分析多芯片组件的互连功耗;用RLC传输线模型对多芯片组件的互连进行表征;通过对输入互连的电流及其等效电阻的近似;推导出多芯片组件互连功耗的频域数学表达式;给出计算机仿真试验结果;对方法的有效性进行验证.
- Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- The power consumption in the sleep mode is the lowest in its class. 睡眠模式下的功耗是同级别中最低的。
- Power Consumption Simulation Model Based on the Working Status. 处理器工作状态的功耗仿真模型及分析。
- CPU which has high performance and low power consumption and cost. LPC2138采用的是ARM7TDMI处理器内核，具有高性能、低功耗、低成本的特点。
- Large capacity, low power consumption, low noise,little dust. 生产能力大、功耗小、噪声低、粉尘少。
- Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
