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- interface state parameters 界面态参数
- Surface discharge in power cable accessories is correlation with interface pressure and interface state. 试验研究了电缆附件与电缆主绝缘结合界面的沿面放电 ,认为放电电压与界面压强和界面状态密切相关。
- Gas holdup and liquid circulation velocity are the mostly important hy drodynamic characters and state parameters of internal-loop airlift reactor. 气含率和液体循环速率是气升式内环流反应器的主要流体力学特征,也是反应器运行过程中的重要状态参数。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Physical mechanisms such as carrier trapping, interface state filling, and temperature related deterioration are revealed. 揭示了系统的纳米晶存储物理机制,例如电荷俘获、界面态填充和温度特性。
- The average molecular weight, critical state parameters and acentric factor of the two kinds of coal liquids were calculated as details. 本论文还根据以上基本性质详细计算了神华煤和胜利煤液化油各窄沸点馏分的平均分子量、临界性质和偏心因子。 计算平均分子量考察了七种关联式,推荐采用Gray推荐式等三种关联式。
- The state parameter is not a valid value of PermissionState. state参数不是有效的PermissionState值。
- It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate. 模拟结果表明:退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。
- To study state parameters of methane as atmosphere gas of pins under shock compression, Aluminum target chambers filled with methane gases to a pressure of 0. 为了研究冲击压缩下用作电探针保护介质的甲烷气体状态参数,用二级轻气炮加载方法加速平面钨合金飞片到4。
- Based on these, a novel estimation method of tracked target status is proposed, which selects some particles with large weights for estimating the tracked target state parameters. 即在视频目标跟踪过程中,按照粒子权值大小的准则,筛选适当数量具有较大权值的粒子进行目标状态估计。
- The diamond film grown on the interface consists of primary nucleus laver and crystalline grainThe interface state as well as growth process of diamond at different regions on a sample or different samples is not same. 胚芽层有三种形态; 同一试样上的不同部位或不同试样上的界面状态及生长过程是不同的。
- The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect. 考虑界面态电荷高斯分布模型以及Poole-Frenkel效应;对SiC MOSFET补偿电流源模型进行了修正;分析了造成6H-SiC NMOS与PMOS器件补偿电流源变化的原因.
- Firstly, the model of state parameters is established, which will affect the pointing precision of theodolite.And then, the state parameters are obtained via choosing and observing some stars. 首先建立了影响经纬仪指向精度的状态参数模型,然后通过选择一定数量的恒星进行观测,确定出该模型的状态参数。
- Discussion shows that the barrier height of Sn/Au HgCdTe contact is pinned at "Bardeen limit" and the interface state density is one magnitude higher than that of the dielectric film HgCdTe interface. 结果表明 ,Sn/Au金属膜 -碲镉汞薄膜 PN器件的电极界面的势垒高度锁定在“Bardeen”限 ,界面密度比介质膜 -碲镉汞的大一个量级
- Effects of coupling agent (KH550) and maleic anhydride graft polypropylene (MPP) on the interface state and rheological properties of the polypropylene/glass bead (PP/GB) composite were studied. 摘要研究了偶联剂(KH550)和马来酸酐接枝聚丙烯(MPP)表面偶联反应对聚丙烯(PP)/玻璃微珠(GB)复合材料界面形态和流变性能的影响。
- Key State Parameters for Coal-rock Interface Recognition 煤岩界面识别的关键状态参数
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
- It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery. 假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
- In the following example, the listening Socket is passed to the callback method through the state parameter. 在下面的示例中,侦听Socket通过state参数传递给回调方法。