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- ion beam epitaxy 离子束外延
- The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced. 介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法。
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- It is a technique called ion beam writing. 这一技术被称为离子束刻写。
- Ion beam mutation has significant bio-effect. 摘要离子诱变具有显著的生物学效应。
- Ion Cluster Ion Cluster Beam Epitaxy Syatem 离子团束外延系统
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术( MBE )的发明经过、现况、和将来的发展。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士,实在很烦。
- The 6 achievements on Ion Beam Bio-engineering of Low Energy were outlined. 摘要简述了低能离子束生物技术在6个主要方面的研究成果。
- Ion beam induced surface modification of polymer was extensively discussed. 介绍了运用高能离子束对聚合物材料进行表面改性的新工艺。
- Allison scanner for high-current ion beam emittance measurements[J]. 引用该论文 徐蓉;邹宇斌;高淑丽;郭之虞;彭士香;钱锋;赵捷.
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- Antireflective film prepared by periodic ion beam assisted deposition[J]. 引用该论文 张大伟;黄元申;贺洪波;邵建达;范正修.
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器,以砷化铟/砷化镓量子点作为活性层,磷化铟镓作为被覆层制作半导体雷射并量测其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
- Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一个制造分子束外延设备的公司,其设备在化合物半导体领域处于领先地位。
- The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated. 本实验研究利用激光分子束外延法 (L%25DMBE)研究在SrTiO3(STO) (0 0 1)基片上生长的BaTiO3(BTO) /SrTiO3(STO)超晶格的微结构 .