您要查找的是不是：
- How can I see the source code to the kernel interface layer? 怎么才能看到内核接口的源码?
- And exceed medium of the copper between low K metal (interrelate) promise to reduce interrelating electric capacity. 而且超低k金属间铜介质(互连)答应降低互连的电容。
- Granulite in Jinshuikou defferent with other granulites on low K、Na,unconspicuouly negative of Rb. 2． 金水口麻粒岩以低K、Na含量，没有明显的Rb亏损不同于其它麻粒岩。
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃（FSG）作为低介电常数材料的一种，它的制备工艺、结构和性能更接近二氧化硅，足以满足0.;18微米甚至0
- The synthesis, structure, properties and process interaction of low k dielectrics are reviewed.Characterization techniques for low k dielectric films are summarized. 综述了低介电常数介质薄膜的制备方法、结构与性能表徵、工艺兼容性等领域的最新进展。
- The Winsock interface layer encountered an unexpected condition during communication with the lower layer services. 在与较低层服务通信期间,Winsock接口层遇到一个意外状况。
- Contains classes which implement each Interface Layer to access wireless messaging like SMS or CBS functionalities on a GSM mobile device. 包含这样的类:它们实现每个接口层以访问无线消息传递,如GSM移动设备上的SMS或CBS功能。
- The sample has an n-tier design containing an HTML-based interface layer and a subscription management middle-tier layer. 该示例有N层设计,包含基于HTML的接口层和订阅管理中间层。
- If functionality contained in a pure MSIL assembly is to be used by unmanaged functions, a mixed assembly must be used as an interface layer. 如果纯MSIL程序集中包含的功能将由非托管函数使用,则必须将混合程序集用作接口层。
- The calculation result shows that the possible SI mechanism (i. e. , the competition between the n - p interaction and the coriolis force in low K space) is also appropriate for odd-odd nuclei in the A = 100 region. 计算结果表明,可能的旋称反转机制(即:低K空间n-p相互作用和科氏力的相互竞争),对于A=100质量区奇奇核也是适用的。
- This paper introduces basic technology of copper interconnect, including single and dual damascene technology, CMP technology, low k dielectric materials, barrier materials and reliability of copper interconnect. 文中介绍了基本的铜互连布线技术 ,包括单、双镶嵌工艺 ,CMP工艺 ,低介电常数材料和阻挡层材料 ,及铜互连布线的可靠性问题
- The interactions between PAMAM dendrimer and nylon 6 matrix and the interface layer formed were discussed to explain the unique in... PAMAM与尼龙6之间强烈的相互作用,以及两相界面上形成的密实薄层,是尼龙6力学性能提高的原因。
- Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- The network interface layer is responsible for merging outgoing frames onto the wire and for pulling incoming frames off the wire. 网络接口层负责把向外发送的帧送到线路中去，并把收到的帧从线路中取出来。
- Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- In terms of the role of interface layer, when the crack propagates from the stiffer side, the interface plastic zone is larger, tends to delaminate. 相同外载条件下，裂纹由弹性模量高一侧垂直界面扩展,易于满足累计损伤判据，倾向于分层。
- Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- The interface layer was fabricated by coating a polystyrene film on the pore surface of porous aluminum using a sol-gel technology. 内耗测量表明,引入该界面层以后,多孔铝的阻尼能力有了非常显著的提高,甚至有了量级的变化。
- Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- Utilizing the second Fike's law, the theoretical model of the diffusing thickness of the interface layer is made, and its theoretical thickness is calculated. 利用菲克第二定律,建立了其界面过渡层扩散厚度的理论模型,根据该模型对6B的界面过渡层厚度进行了计算。
