该词条未找到_海词词典

您要查找的是不是：

In paper effect of oxygen and carbon action on minority carrier lifetime in thermal process of mc-Si cell and properties of Si_3N_4 film and effects of antirefle-ction and passivation were studied. 为此本文重点研究了多晶硅片在电池制造热工艺中氧碳的行为及其对少子寿命的影响;并研究了氮化硅薄膜的性能及对多晶硅电池的减反射及钝化作用。
Minority Carrier Lifetime in P-type Hg_(1-x)Cd_xTe Grown by MBE 分子束外延P型Hg_(1-x)Cd_xTe少子寿命的研究
A Model of Minority Carrier Lifetime Degradation in SiC Irradiated by Electron 电子辐照下的SiC少子寿命退化模型
1 carrier lifetime; germanium; minority carriers; photoconductivity decay; silicon; single crystal silicon. 载流子寿命，锗，少数载流子，光电导衰退，硅，单晶硅。
16.1 carrier lifetime; germanium; minority carriers; photoconductivity decay; silicon; single crystal silicon. 载流子寿命，锗，少数载流子，光电导衰退，硅，单晶硅。
Process Control for Uniform Minority Carrier Lifetime in Super Power HVDC Thyristor 直流输电用超大功率晶闸管少子寿命在线控制
Influence of Al BSF Gettering on Minority Carrier Lifetime in Silicon Solar Cell 硅光单体电源铝背场吸杂对非平衡少子寿命的影响
Measurement of Minority Carrier Lifetime on Silicon Wafers with Collinear Four-Probe Array 硅片少子寿命的直排四探针测试
The Theoretical Analysis of Minority Carrier Lifetime Under the Pulse Laser Stimulation 脉冲光激励对少数载流子寿命的理论分析
Oxygen Adsotption Effects on Minority Carrier Lifetime in CdS-CdSe Sintered Films 氧吸附对CdS-CdSe薄膜中少数载流子寿命的影响
Measurement on Minority Carrier Lifetime of Mercury Cadmium Telluride Material by Microwave Photoconductivity Decay Method 碲镉汞材料少子寿命的微波反射光电导衰减测量
Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay 硅和锗体内少数载流子寿命测定光电导衰减法
INFLUENCE OF CARRIER RECOMBINATION IN THE SPACE CHARGE REGION AND INGRAIN BOUNDARIES ON MINORITY CARRIER LIFETIME IN THE BASE REGION OF POLYSILICON SOLAR CELLS 空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响
minority carriers lifetime 少子寿命
minority carrier lifetime 少数载流子寿命
the minority carrier lifetime 少子寿命
The mobility value used is that of the minority carrier. 所采用的迁移率值都是少子迁移率。
effective lifetime of minority carrier 少数载流子有效寿命
Pertaining to a semiconductor device in which both majority and minority carriers are present. 用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo. 利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。