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- minority carrier storage time 少数载流子存储时间
- minority carrier storage effect 少数载流子存储效应
- The mobility value used is that of the minority carrier. 所采用的迁移率值都是少子迁移率。
- We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo. 利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
- In paper effect of oxygen and carbon action on minority carrier lifetime in thermal process of mc-Si cell and properties of Si_3N_4 film and effects of antirefle-ction and passivation were studied. 为此本文重点研究了多晶硅片在电池制造热工艺中氧碳的行为及其对少子寿命的影响;并研究了氮化硅薄膜的性能及对多晶硅电池的减反射及钝化作用。
- So the back surface recombination velocity S b begins to strongly influence solar cell performance when the ratio of minority carrier diffusion length to device thickness approached or exceeds unity. 而当少数在流子的扩散长度大于硅片厚度时,电池片上下表面的复合速率对效率的影响显得更加重要。
- The applicability of the assumption, "the surface photo-voltage is a monotonic function of the surface excess minority carrier density", to epitaxial material is studied by numerical analysis method. 本文应用数值计算方法研究了表面光电压是表面非平衡少子浓度的单调函数这一假设对于同型外延材料的可应用性。
- Pertaining to a semiconductor device in which both majority and minority carriers are present. 用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。
- effective lifetime of minority carrier 少数载流子有效寿命
- minority carrier transport factor 少数载流子传输因子
- minority carrier transit time diode 少数载流子渡越时间二极管
- Artistic people are in a tiny minority in this country. 爱好艺术的人在这个国家只占少数。
- The minority nationality concert lasted two hours. 少数民族音乐会持续了两个小时。
- Minority Carrier Lifetime in P-type Hg_(1-x)Cd_xTe Grown by MBE 分子束外延P型Hg_(1-x)Cd_xTe少子寿命的研究
- A storage cell in some amorphous memory devices. 某些非晶体存储器中的一个存储单元。
- A minor road connects the highways. 一条小路同几条公路相连。
- I don't want to go into the minor details now. 我现在不想涉及枝节问题。
- Your carrier for this flight is British Airways. 你的这一班机是英国航空公司的飞机。
- He fed the storage tank with gasoline. 他往储油罐里加满汽油。
- The specific “sweep-back” current caused by the minority carriers stored within the parasitic pnpn structure of CMOS ICs has been qualitatively proved to be the major cause of TLU. 此元件层级实验设置能产生欠阻尼弦式电压于待测积体电路的电源供应电压上，以用来模拟待测积体电路在实际系统层级静电放电测试下所遭受到的静电放电干扰情形。
