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The planes survived the wind tunnel test intact. 这些纸飞机在测试风道中丝毫未损。
Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
It is not correct to think of the wind tunnel having uniform flow. 设想风洞具有均匀的气流是不正确的。
Setting very low speeds in a wind tunnel is always a vexatious problem. 在风洞中调出低风速来始终是一个麻烦问题。
It should be noted that a balance is not always required in a wind tunnel. 应该指出，天平对风洞来说并非是绝对必须的。
I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
The aerodynamics characteristics of this airfoil is studied in wind tunnel. 进行了翼型的低速气动力性能研究，为附面层特性研究提供了方向。结果表明，该翼型具有较好的升阻和俯仰特性，但失速特性差。
In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 缩小分子束(水分子集团)，调整分子结构波动。
The wind tunnel is produced under a technical cooperation agreement with Ford Co of US. 风洞机是根据与美国福特公司的技术合作协议生产的。
A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
Any flight test and wind tunnel correlation always suffers from a great number of unknowns. 在对飞行试验与风洞试验进行比较时总有大量的未知数。
The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫谱研究了Ge(111)表面与氯分子热反应动态学。
This paper studies the computation of the capsizing probability of a ship under the combined action of the beam wind and beam sea. 探讨了对横风横浪联合作用下的船舶运动及其倾覆概率计算 .
BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
The experiments were conducted in a wind tunnel at a location 50 ft downwind from the fan. 实验是在风洞中距离风机50英尺处进行。
AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
The damping derivatives can only be determined experimentally in the wind tunnel or ballistic range. 阻尼导数只能用风洞或弹道试验来确定。
Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
In the experiment under the 20 m/s wind tunnel conditions, the wind abrasion modulus is almost zero. 在每秒20米的风洞实验中，吹蚀模数几乎为零。