您要查找的是不是:
- This paper introduces basic technology of copper interconnect, including single and dual damascene technology, CMP technology, low k dielectric materials, barrier materials and reliability of copper interconnect. 文中介绍了基本的铜互连布线技术 ,包括单、双镶嵌工艺 ,CMP工艺 ,低介电常数材料和阻挡层材料 ,及铜互连布线的可靠性问题
- And exceed medium of the copper between low K metal (interrelate) promise to reduce interrelating electric capacity. 而且超低k金属间铜介质(互连)答应降低互连的电容。
- Granulite in Jinshuikou defferent with other granulites on low K、Na,unconspicuouly negative of Rb. 2. 金水口麻粒岩以低K、Na含量,没有明显的Rb亏损不同于其它麻粒岩。
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃(FSG)作为低介电常数材料的一种,它的制备工艺、结构和性能更接近二氧化硅,足以满足0.;18微米甚至0
- The synthesis, structure, properties and process interaction of low k dielectrics are reviewed.Characterization techniques for low k dielectric films are summarized. 综述了低介电常数介质薄膜的制备方法、结构与性能表徵、工艺兼容性等领域的最新进展。
- The calculation result shows that the possible SI mechanism (i. e. , the competition between the n - p interaction and the coriolis force in low K space) is also appropriate for odd-odd nuclei in the A = 100 region. 计算结果表明,可能的旋称反转机制(即:低K空间n-p相互作用和科氏力的相互竞争),对于A=100质量区奇奇核也是适用的。
- Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- Low dielectric constant (low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance (RC) delay, power consumption and cross talk of ULSI. 摘要用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- Low dielectric constant(low k) films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance(RC) delay,power consumption and cross talk of ULSI. 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。
- injection products of K materials K料注塑制品
- Abstract: Low dielectric constant ( low k ) films used as intermetal or interlevel dielectrics can minimize interconnect resistancePcapacitance ( RC) delay,power consumption and cross talk of ULSI. 摘要: 用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI) 的互连延迟、串扰和能耗。
- The government is trying to keep a low profile on this issue. 政府力图在这个问题上保持低姿态。
- Keywords High k materials;Gate dielectric;Molecular beam epitaxy;HfO_2;Er_2O_3; 高k材料;栅介质;分子束外延;二氧化铪;三氧化二饵;
- The singer forced his low notes. 那位歌手勉强唱出低音。
- He because of bashful but low head. 他因羞愧而低下了头。
- The ship lay keeled over at low tide. 那艘船因退潮而倾覆。
- My home town lies low in a hidden valley. 我的家乡位于一个隐蔽的山谷里。
- Nano technology will soon pervade the world. 奈米科技将很快普及于全世界。
- Low grades are getting Hellen down. 低分数使海伦闷闷不乐。