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- nanocrystalline Ge thin films 纳米Ge薄膜
- The results to make the Ge segregation and the strain of SiGe thin film. 这结果会造成锗原子的偏析和矽锗薄膜的应力。
- In this paper, preparing nanocrystalline carbon nitride thin films has been investigated by using Arc Discharge and dc Hollow Cathode Discharge (HCD). 本文主要论述了采用弧光放电(Arc Discharge)和直流空心阴极放电(DC Hollow Cathode Discharge)两种方法来制备纳米陶瓷氮化碳薄膜。
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT／PEK-C were prepared. 制备了纳米复合材料薄膜PT／PEK-C。
- The Ge-on-insulator (GOI) structure accomplished, and the thin film Ge surface observed very rough by atomic force microscopy (AFM). 然而我们成功制作出”绝缘层上锗”，同时用原子力显微镜发现锗表面非常粗糙。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Anatase TiO2 nanocrystalline thin films were deposited on GFC via the sol-gel method, and were characterized by X-ray diffraction, scanning electron microscopy, and UV-visible spectrophotometer. 利用溶胶-凝胶法制备了玻璃纤维布负载的纳米TiO_2光催化膜。
- To quantificationally study the sized distribution of Si nanoparticles in thin films,"uniformity-degree"is used to analyze the experimental results on nanocrystalline Si films prepared by pulsed laser ablation authorized by Lowndes. 为了对纳米Si薄膜中晶粒尺寸的分布进行定量研究,首次提出“晶粒尺寸均匀度”的概念,并对Lowndes等人采用脉冲激光烧蚀方法制备纳米Si薄膜的实验结果进行了定量分析。
- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- The morphology of SnO2: Sb thin films was researched by AFM. 采用AFM分析了SnO_2:Sb的表面形貌。
- Eroding of lead zirconate titanate (PZT) thin films[J]. 引用该论文 蔡长龙;李明;马卫红;刘卫国.
- Applications of VO2 thin films on laser protection[J]. 引用该论文 宁永刚;孙晓泉.
- Z. KNITTL “Optics of Thin Films” Taipei : [s.n.], [c1976]. 李正中“薄膜光学与镀膜技术”艺轩图书出版社;2001.;1;第二版
- Optical Storage Performance of Cyanine Compound Thin Films[J]. 引用该论文 唐晓东;顾冬红;干福熹.
- Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
- The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
- This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
