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- near field effect 近场效应
- Strength - The strength of the field effect. 强度-场的影响强度。
- Previous HRTF measurement were lack of near field data. 以往在实际测量头相关传输函数时，缺乏近场数据。
- Yet this diffusion must take place against the frozen field effect. 可是，这种扩散必须在冻结磁场效应的背景下发生。
- Main Transistor: Schottky, MOS field effect, the three-regul... 深圳市中芯半导体发展有限公司>>类别：其他三极管广东省-深圳市2008-11-0811:43
- The calibration results using MFCT close to the results by near field. 与近场校正结果比较，两者相近。
- The beam quality is good and the near field is avoid of filamentation. 在光的场形上，远场的角度可达到绕射极限的角度。
- Thin film transistor(TFT)is one type of field effect transistors(FET). 薄膜晶体管(TFT)是众多场效应晶体管(FET)中的一种。
- The results show that the stair depth error and stair slope error can cause great modulations in the near field of CSG, but the dignment error has little effect on the modulations. 计算结果表明深度误差和塌边误差对光束近场调制有很大影响,对位误差相对影响较小,而相互影响更加严重。
- The application of probabilistic analysis approach in the near field modeling of ocean outfall. 概率分析法在污水海洋排放近区模拟中的应用。
- The cylinder"s RCS of TM and TE,as well as the near field distribution are presented. 利用这个等效网络分析了多个分层偏心介质圆柱对TM和TE波的散射截面。
- Experiment on the field effect of Lorsban combined with BetaCypermethrin against Pieris rapae L. 毒死蜱与高效氯氰菊酯复配对菜青虫的田间药效试验。
- This method is especially fit for the situation of multifocus focusing in the near field. 该方法尤其适用于多焦点近场聚焦的场合。
- Abstract: By theoretical analysis and experiment, it has been proved that injection photodetector is not a MOS field effect structure. 文摘:通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构，对文献[9]中得出的不同的结论和所讨论的问题阐述了自已的见解。
- The electric field intensity decay is 40 dB per decade of distance in near field of a magnetic dipole. 磁偶极之近场辐射电场强度随距离每增十倍衰减四十分贝。
- Because the molten iron in the core is a good electrical conductor, the field is trapped in the fluid, the frozen field effect. 因为地核里的熔解铁是良好的电导体，磁场被限制在流体内，这便是冻结磁场效应。
- Competition can not always plain sailing, maybe sometimes you just behind the near field. 比赛不可能永远一帆风顺，也许有时刚开场不久你就落后。
- The paper describes a two-input NOR circuit that is formerd by the capacity diode field effect logic circuit (CDFL). 叙述了用电容二极管场效应逻辑电路形式制作的二输入或非门电路。
- Analysis of the errors between measurement and simulation of near field for high-intensity THG[J]. 引用该论文 李恪宇;向勇;冯斌;张彬;蔡邦维;马驰;魏晓峰;程晓锋;师智全.
- The temperature field effect of DEFAE is more significant than that of SEFAE and TNT. DEFAE的温度场效应要比SEFAE、TNT高;
