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- photoresist flavucidin 光蚀刻的伤痕
- Study on Process of Water-soluble Printing Photoresist. 水性印花感光制版材料的研究。
- Thereafter, the patterned photoresist layer is removed. 此后，移除图案化光刻胶层。
- This paper introduces a chemically amplified photoresist appropriate for argon ion laser direct imaging. 本文介绍一种氩离子激光直接成像化学增幅感光树脂。
- In this study, ozonized water in the single wafer processor was used to study photoresist stripping. 本文主要研究臭氧水在单片晶圆旋式蚀刻机中，来去除晶圆表面的光阻的能力。
- The groove width is reduced by employing a slope-etching process to form the photoresist pattern. 通过采用倾斜蚀刻工艺形成光致抗蚀剂图案，从而减小了凹槽的宽度。
- Main factors of influencing photoresist thickness for dip coating is analysed in this paper. 分析了提拉法涂胶中影响胶膜厚度的主要因素，并据此确定出胶膜厚度；
- The method on profile-control of micro-optic element in photoresist was presented. 介绍了连续微光学元件在光刻胶上的面形控制方法。
- Rectangular photoresist gratings can be fabricated by taking advantage of the nonlinearity of photoresist. 利用光刻胶的非线性效应可以制作出了矩形的全息光栅。
- A small undesired hole in an oxide, opaque region of a mask or reticle, or in a photoresist layer. 氧化物、掩模或标线的不透明区域,或光刻层中不需要的小孔。
- A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. 公开了从半导体基底上去除光致抗蚀剂或者光致抗蚀残留物的一种方法。
- This paper researches the influence of resin and wetting agent for the property of photoresist. 本论文研究了光阻剂中分别增加环氧树脂和润湿剂对其性能的影响。
- Positive Photoresist is rubber particles upward, the same height and diameter of the rubber. 正胶就是胶皮颗粒向上、高度与直径相等的胶皮。
- Liquid photoresist consists of living oligomer, living monomer, additive and photoinitiator. 液体光致抗蚀剂由活性齐聚物、活性单体、颜料、添加剂和光敏引发剂组成。
- As photoresist has the exposal characteristics, two-spectrum method is fit for measuring the thickness of photoresist. 针对光刻胶有曝光的特性，双光谱法更适合于胶厚检测。
- The most prevalent procedure is to use photolithography or electron-beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer. 最常用的步骤是用光蚀刻或电子束蚀刻法，在矽晶圆表面的光阻层上制作出图案。
- In microelectronics, the process of removing material, on a chip, left exposed by the exposure and development of the photoresist. 在微电子技术中，通过曝光并显影光刻胶除去芯片上的物质露出剩余部分的工艺。
- A method of fabricating rough surfaces of known statistical parameters by exposing the photoresist to laser speckle patterns is analysed in this paper. 分析了用光刻胶记录激光散斑来制作粗糙度参数可控表面的方法，并成功地制作了一批样品。
- Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages. 同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
- It is found that compared with laser direct writing exposure lithographic exposure is more benefit for the steepness of pattern on photoresist. 实验发现，与激光直写曝光相比，光刻曝光更有利于胶上图形的陡直度。
