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- Study of amorphous Si thin films fabricated by ion-beam sputtering 离子束溅射生长非晶Si薄膜的研究
- Si thin films 硅薄膜
- Ca2 Si thin films Ca2Si薄膜
- Si thin film 硅薄膜
- BC 2N thin films were deposited by hot filament assisted chemical vapor deposition (CVD) on Si and diamond substrates. 应用热丝辅助射频等离子体化学气相沉积法在硅、金刚石衬底上合成了 BC2 N薄膜 .
- GaN thin films were prepared on Si(111) substrates by electrophoretic deposition(EPD) technique. 采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜。
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. 引用该论文 赵家龙;高瑛;刘学彦;窦恺;黄世华;虞家琪;梁家昌;高鸿楷.
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT／PEK-C were prepared. 制备了纳米复合材料薄膜PT／PEK-C。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Aluminum nitride (AIN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. 采用直流磁控反应溅射法,在Si(100)和Pt/Ti/St(100)上制备了具有较好(002)择优取向性的AlN薄膜。
- The chemical properties of the thin films with cifferent [Si]/[C] ratiocsare compared and discussed on the basis of the experimental Si LVV and C KLL Auger Spec-trum. 根据实验获得的Si LVV和CKLL俄歇谱比较和讨论了不同[Si]/[C]浓度比薄膜的化学特征.
- BCN thin films were grown by RF reactive sputtering. 用射频反应溅射法制备出 BCN薄膜 .
- The morphology of SnO2: Sb thin films was researched by AFM. 采用AFM分析了SnO_2:Sb的表面形貌。
- In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. 中文摘要本论文探讨以热蒸镀法，在P型矽基板上蒸镀沉积N型氧化锌薄膜，并以高温炉管做热处理，进行P-N二极体之制作。
- Eroding of lead zirconate titanate (PZT) thin films[J]. 引用该论文 蔡长龙;李明;马卫红;刘卫国.
- Applications of VO2 thin films on laser protection[J]. 引用该论文 宁永刚;孙晓泉.
