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- The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method 声空化物理化学综合法制备发光多孔硅薄膜的微结构与发光特性
- porous silicon film 多孔硅膜
- Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma 氢等离子体气氛中退火多孔硅的表面和光荧光特性
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- Recent progress of electroluminescence based on porous silicon was reviewed. 摘要综述了多孔硅电致发光研究进展。
- Abstract: The influnence of irradiation on porosity during preparation of porous silicon( PS) is studied in this paper. 文摘:研究了多孔硅制备过程中光照对孔隙率大小的影响。
- In 1990, Canham detected that porous silicon could emit visible light at room temperature. 1990年,Canham发现了多孔硅(PS)在室温下发射相当强的可见光。
- Blue|emitting porous silicon(PS) prepared by hydrothermal etching was treated by rapid thermal oxidation (RTO) process. 对用水热腐蚀技术制备的、具有蓝光发射的多孔硅样品在快速热氧化 (RTO)处理前后其光致发光谱、硅纳米颗粒的大小及尺寸分布变化进行了研究 .
- This article has reported a new method to prepare porous silicon by using raction kettle without corrosive acid. 摘要报道一种在无酸性腐蚀液的条件下用反应釜制备多孔硅的新方法。
- This shows that the impact ionizationeffect increasewith the decreasing of silicon film thickness. 这说明,随着硅膜厚度的减小,器件内部的碰撞离化效应增加。
- Tunable Superstructures were obtained in hydrothermally etched iron-passivated porous silicon (IPS). 摘要采用水热腐蚀技术制备的铁钝化多孔矽表面具有可调超结构。
- Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied. 研究了多孔硅衬底微波CVD金刚石薄膜的制备工艺及其场电子发射特性。
- A kind of flexible glass capillary wool degras column modified by silicon film was researched. 本文研究了一种硅膜改性弹性玻璃毛细管羊毛脂色谱柱。
- This paper presents the dielectric and mechanical properties of porous silicon nitride ceramics. 研究了预烧结对反应烧结多孔氮化硅陶瓷的介电性能和力学性能的影响。
- Study on properties of electroluminescence from porous silicon heterojunction device[J]. 引用该论文 杨亚军;李清山;刘宪云.
- Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 顶部硅膜-生产半导体电路的硅层,位于绝缘层顶部。
- Abstract: Porous silicon (PS) was prepared by anodically etching of n-type silicon in hydrofluoric acid solution. 文摘:多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。
- Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 顶部硅膜厚度-顶部硅层表面和氧化层表面间的距离。
- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层-在绝缘层下部的晶圆片,是顶部硅层的基础。
- On the other hand, porous silicon with silica gel can emit blue light afterirradiated by laser with given power density. 采用一定功率密度的激光处理覆盖有二氧化硅凝胶的多孔硅的方法,获得了在不影响其机械强度的前提下的多孔硅的蓝光发射。
