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- Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文 王得勇;刘杰;贾金锋;刘洪;薛其坤.
- Theory models for quantum well states in photoemission spectroscopy 量子阱态光电子谱研究的理论模型
- Local work functions of Pb films tuned by atomic-layer-resolved quantum well states 量子阱态对Pb薄膜局域功函数的调制
- quantum well states 量子阱态
- The ground state energy and the binding energy of a bound polaron in Quantum-dot Quantum well structure are calculated, and the free polaron is also studied. 我们数值计算了量子点量子阱结构中的自由极化子和束缚极化子的基态能量以及基态结合能。
- Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文 种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
- After all,a sound mind in a sound body is the best state to be in. 毕竟,长在健康身体上的健康头脑才是最好的状态。
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用该论文 闫占彪;郭震宁.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文 谭鹏;路洪.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续):垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续):平面雷射:双异质结构,量子井,多重电极,面发射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射:双异质结构,量子井,多重电极,面发射。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比,在相近的输出功率下,器件的光谱宽度从18nm提高到了37nm。
- Mr. Lorry's veins, methodical as their courses could usually be, were in no better state now it was his turn. 罗瑞左生的血液循环虽然一向循规蹈矩,现在也窝了火,状态也并不更佳。