您要查找的是不是：
- It is also used as the etchant for etching Aluminum and Silicon Nitride film in semi-silicon IC. 在硅平面晶圆集成电路生产中，用于铝及氮化硅的蚀刻；
- It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
- AES INVESTIGATION OF SILICON NITRIDE FILM 氮化硅薄膜的AES研究
- From X-ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed. 对不同富矽量的氮化矽薄膜做了红外和光致发光的比较研究。
- This paper describes the study on the component and structure of the silicon oxide and silicon nitride films by infra-red absorbed spectrum. 利用红外吸收谱等微观分析对氧化硅和氨化硅薄膜的成分和结构进行了研究。
- Microfabrication of silicon nitride film applied in microsensor 微型传感器中氮化硅薄膜的微加工技术
- Investegation of mechanical property of LPCVD silicon nitride film with micromachined bridge 微机械悬桥法研究氮化硅薄膜力学性能
- Effect of Plasma Enhanced Chemical Vapor Deposition Parameters on Characteristics of Silicon nitride Film 等离子增强型化学气相沉积条件对氮化硅薄膜性能的影响
- MICROBRIDGE METHOD DETERMINING THE MECHANICAL PROPERTIES OF LOW STRESS LPCVD SILICON NITRIDE FILM AND ITS ERROR ANALYSIS 微桥法研究低应力氮化硅力学特性及误差分析
- Photoluminescence from Er-doped Silicon-rich Silicon Oxide Film and Er-doped Silicon-rich Silicon Nitride Film and Its Annealing Behavior 室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火
- Photoluminescence Study of Silicon Nitride Films With Different Si-rich Degrees 富硅量不同的富硅氮化硅薄膜的光致发光研究
- silicon nitride film 氮化硅薄膜
- The first is a silicon nitride window sandwich (picture below). 第一种是氮化硅夹心窗（下图）。
- On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT. 与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。
- Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition 螺旋波等离子体增强化学气相沉积氮化硅薄膜
- Study on the Preparation of Hard and Wear-resistant Titanium Nitride Films on Silicon Nitride Ceramic Cutting Tools 氮化硅陶瓷刀具表面涂覆高硬耐磨氮化钛涂层研究
- The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised. 采用光化学气相淀积(光CVD)氮化硅薄膜进行器件的表面钝化;使整个器件提高了可靠性.
- Too high of a surface temperature will result in a silicon nitride reaction. 表面温度过高容易导致硅、氮发生反应。
- The picokeystone is trapped between the two silicon nitride windows. 小楔块儿陷于两个氮化硅窗体中间。
- Microstructure and Optical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited by Helicon Wave Plasma Enhanced Chemical Vapor Deposition HWP-CVD氮化硅薄膜的结构和光学特性
