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Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI). 在室温下，以硅（100）为衬底，在不同的衬底偏压（即团簇不同碰撞能量）的条件下，用荷能团簇碰撞沉积方法制备了TiN薄膜。
substrate bias voltage 基体偏压
The full bias voltage appears across RL2. 全部的偏置电压出现在RL2上。
The results showed that Si-B-N thin films involving obvious hexagonal borazon(h _ BN) and cubic borazon(c _ BN) crystalline phases could be obtained by applying a suitable negative bias voltage to the substrate of samples. 结果表明 ,通过给试样基体加一适当的直流负偏压 ,得到含有显著六方氮化硼 (h_BN)、立方氮化硼 (c_BN)结晶相的Si-B -N薄膜
Different bias voltage for the input buffer transistor. 不同偏置电压的输入缓冲晶体管.
The transformer isolates the transistors with regard to d-c bias voltage. 变压器可在两个晶体管之间隔离直流偏压。
The results showed that diffusion coefficient and diffusive distance increased w ith raising of negative substrate bias. 结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed. 对利用热灯丝CVD沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
Amorphous diamond(a-D) films deposited by filtered cathodic vacuum arc(FCVA) technology with different substrate bias were investigated. 采用过滤阴极真空电弧技术,通过施加不同衬底偏压制备了非晶金刚石薄膜。
One measure of the quality of a diode is its leakage current at a specified reverse bias voltage. 衡量二极管质量的一个方面就是在规定的反向偏置电压下的泄漏电流。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory. 摘要木文对热灯丝CVD沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper,the nucleation process of diamond by filament CVD was analyzed,and enhanced flux of ions by negative substrate bias was investigated in theory. 本文对热灯丝CVD沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量.
In the experiment, we found the locking range of OEO was greatly affected by the bias voltage of modulator in the loop. 实验中发现OEO中凋制器的偏置电压对OEO的注入锁定范围有很大影响.
If the bias voltage is less than 42V off ground, the isolated BNC vacuum feedthrough will not need a safety shield. 如果对地的浮地电压小于42V，那么绝缘的BNC接头就不需要安全屏蔽。
The limiter consists of a superconducting coil, a diode bridge and a bias voltage supply. 桥式超导故障限流器,它由超导磁体、二极管桥路和直流偏压源组成。
During IGBT is off, the gate should be provided reverse bias voltage for ensuring the safe of IGBT. 在IGBT关断期间，IGBT的栅极需加反向偏置电压，避免IGBT的误动作。
How to choose the bias voltage, the width and the period of the gated pulse is very important. 偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。
The gain of the APD can be controlled by the magnitude of the reverse bias voltage. APD的增益可以由反向偏置电压的幅度来控制。反向偏置电压越大增益就越高。
It successfully predicts the threshold voltages of buried channel MOSFET"s with a large range of channel lengths.Also, the reducing substrate bias effects in deep-submicron devices are included. 模型反应了较宽沟长范围内埋沟MOSFET的开启电压与沟长及偏置的关系，并预测了在深亚微米下衬偏效应随沟长减小而减小的特性。
Reference [1] concluded that for the phase-locking of Gunn Oscillator, timing by varying the bias voltage on the diode is not a practical method. 以往国内外采用种种锁相方法,而直接控制体效应振荡器偏压的锁相法则被认为是不切实际的方法。