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- vacuum arc plating 真空电弧镀
- The use of filter vacuum arc cathode plating (FCVA) nano-technology production of amorphous diamond films can achieve the thinnest 2 nanotechnology, diamond structure SP3 in more than 80 percent. 利用滤质阴极真空电弧镀(FCVA)技术生产的纳米级非晶金刚石薄膜最薄可以达到2纳米,金刚石结构SP3的含量超过80%25。
- The effect of second anode action on the cathode vacuum arc discharge stability in the cathode arc deposition technology is studied. 研究了阴极弧等离子体沉积中第二阳极现象改善弧放电稳定性的作用。
- Arc slag remelting (ASR) of the ESR absorption and the advantages of vacuum arc remelting. 弧渣重熔(ASR)吸收了电渣重熔和真空电弧重熔的优点。
- Boxman, R. L., Sanders D., Martin P. J., Handbook of Vacuum Arc Science and Technology,(1995). 林建宏,磁控溅射沈积铬基硬质镀膜高温氧化与机械性质研究,中兴大学硕士论文,(1998)。
- Direct current metal filtered cathodic vacuum arc(FCVA) and acetylene gas(C_2H_2) are wielded to synthesize amorphous carbon films on Si(100). 采用直流金属磁过滤阴极真空弧(FCVA)制造出Ti和乙炔(C2H2)气体的双等离子体在单晶硅(100)上制备非晶态碳膜.
- The forces applied on the molten pool at the cathode surface under the action of an ex-ternal magnetic field during vacuum arc coating are analyzed. 分析了在外加磁场作用下,真空电弧镀膜中阴极靶面液池的受力情况,导出了液滴喷溅特性受磁场影响的关系式。
- For subsonic state (ion) high current vacuum arc, with the increase of electrode separations, the loss of interelectrode plasma increases. 对于离子处于亚音速状态的大电流真空电弧,随着开距的增大,极间等离子体的损失增多。
- Finally the principle is studied on how the diameter of shield influences vacuum arc voltage,shield voltage and shield current. 最后研究了屏蔽罩大小对真空灭弧室电弧电压、屏蔽罩电位及屏蔽罩电流的影响。
- Amorphous diamond(a-D) films deposited by filtered cathodic vacuum arc(FCVA) technology with different substrate bias were investigated. 采用过滤阴极真空电弧技术,通过施加不同衬底偏压制备了非晶金刚石薄膜。
- Base on this, in this work we prepared in situ TiC or (TiB+TiC)/Ti-1100 composites with various volume fraction of reinforcements by the consumable vacuum arc melting. 主要研究结果如下:在所制备的原位自生(TiB+TiC)或TiC/ Ti-1100复合材料中,增强体TiB、TiC分布均匀,与基体界面洁净,没有明显反应层存在。
- According to vacuum arc theory, the contact structure of vacuum interrupter is changed to produce magnetic field in the open space of the switching house. 根据真空电弧理论,人们通过改变真空灭弧室触头结构,使其开断时在断口空间产生磁场,以此来提高真空灭弧室的短路电流开断密度。
- Vacuum arc furnace is an important equipment for melting refractory alloys and active metals, which plays an important role in the preparation of special materials. 真空电弧炉是熔炼难熔合金和活性金属的重要设备,对许多工业领域的特种材料的制备起着重要的作用。
- The descriptions of system coefficient, the factors of plasma transmission and the applications of cathodic vacuum arc deposition are analyzed emphasize. 重点分析了系统效率,等离子体传输影响因素和真空阴极电弧离子镀技术在薄膜研究和制造中的应用。
- The cathode vacuum arc ion source and ion implantation facility have been developed in our institute for industrial application of surface modification of materials. 摘要为发展金属离子束材料表面改性技术的工业应用,北师大低能核物理所研制成阴极真空弧离子源和离子注入装置。
- Precast of Concrete Arc Plate in Dry and Hot Area 干热地区混凝土拱板的预制
- Our device consists of two birefringence plates and a half wave plate.On the front and back surfaces of the OLPF, an antireflection film and an infrared cutting film arc plated. 其主要由2片双折射晶体平板和1片波片构成三明治结构,并在前、后表面分别镀上红外截止膜和增透膜。
- The type vacuum arcing chamber is miniaturization product, adopts copper and chrome contactor material, cup shape and longitudinal magnetic field structure, glass insulation case, sealing type shield barrel in the plate. 本型号真空灭弧室为小型化产品,采用铜铬触头材料,杯状纵磁场结构,玻璃绝缘外壳,盘片中间封接式屏蔽筒。
- Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA). 用金属蒸发真空弧离子源注入机将Y离子注入硅,制备出特性良好的硅化物。
- The progress of striking and restriking of the vacuum arc at the contacts in an axial magnetic field has been photographed with a microcomputer-based high-speed camera system for dynamic images. 利用动态图像高速微机系统,对真空电弧纵向磁场触头燃弧及重燃过程进行了动态拍摄,对比分析了不同开距下宏观动态图像、微观电子密度和电弧中心光强的不同时域特征。