您要查找的是不是：
- The Development of Wide Band Gap Semiconductor device 宽禁带半导体器件的发展
- Keywords Aluminm nitride;Wide band gap semiconductor;Heteroepitaxy; 氮化铝;宽禁带半导体;异质外延;
- Preparation and application of AlN films with wide band gap semiconductor 宽带隙半导体AlN薄膜的制备及应用
- Preparation and application of AIN films with wide band gap semiconductor 宽带隙半导体AIN薄膜的制备及应用
- wide band gap semiconductor 宽禁带半导体
- The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC. 研究表明， 氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
- Among transitional metal oxides,nano NiO is one of the relatively few metal oxides with p-type semiconductivity,which has stable and wide band gap. 纳米氧化镍是过渡金属氧化物中不多见的p型半导体之一,具有稳定而较宽的带隙,作为一种新型功能材料受到人们关注。
- Tetrahedral amorphous carbon films (ta C) have become a new type of wide band gap amorphous materials because of its valuable physical and chemical properties. 四配位非晶碳薄膜是近年来发展的一种新型宽带隙半导体材料,具有独特的物理和化学特性。
- wide band gap Ⅱ-Ⅵ diluted semiconductors 宽带Ⅱ-Ⅵ族磁性半导体
- narrow band gap semiconductor 窄带隙半导体
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
- RTWP: Received Total Wide band Power. 接收总带宽功率。
- His current research will focus more on wide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scale device development. 现在的研究课题主要是著重在宽能隙半导体金属氧化物化学气相磊晶的成长，多学科材料研究及奈米器件研发。
- Test Fdb : random vibration wide band. Fdb 试验.;在宽带上的随机振动
- wide band gap 宽禁带
- wide band gap materials 宽带隙半导体材料
- Design plan of wide band network of feicheng Mining Group Co. 肥城矿业集团公司宽带网络设计方案。
- His currente research will focus more onw ide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scalehdevice Network evelopment. 现在的研究课题主要是著重在宽能隙半导体金属氧化物化学气相磊晶的成长，多学科材料研究及奈米器件研发。
- The average Fermi energy limit for 6k points is-12.45eV. The band gap at the edge of the first Brillouin Zone is 2.31eV. It shows that cellulose trinitrate has an electric conductivity similar to a semiconductor. 六个k点下的平均Fermi能界为-12.;45eV。 在第一Brillouia区边缘的带隙为2
