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- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- The results of Auger Electron Spectroscopy (AES) and Energy Dispersive Analysis X-ray Spectroscopy(EDAS) measurements show that the interface layer contains Au-Ga intermetallic compound and impurity P,Si. 借助俄歇能谱(AES)和能量色散谱(EDAS)初步分析了Au-Si/n-GaP系统接触的界面含有Au-Ga金属间化合物以及P和Si杂质。
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- Dietl et al. predicted that p type Mn doped ZnO could have ferromagnetism at room temperature. Dietl等人的理论计算预测，p型掺杂(Zn,Mn)O可能具有室温铁磁性。
- zinc impurity P-type detector 掺锌P型探测器
- P type CIS and CIGS thin films are fabricated by evaporating selenylation method,and so are N type CdS. They compose heterogeneity PN junction solar cells. 采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。
- But there are many basic problems waiting for investigating,for example, high qulity bulk ZnO crystals growth、stable p type doping realiztion、good schottky contact making,etc. 然而现在生长大块的ZnO体单晶，制得高质量的ZnO薄膜，实现稳定可靠的P型掺杂，做出重复性好热稳定性好的金属ZnO肖特基接触欧姆接触的技术成为亟待解决的问题。
- By means of this property,the connect lines,P type semiconductor or N type semiconductor,P N junction,and 2D and 3D integrated circuit connection can be made. 利用这个特性,可制作导电图样,制作连线,制作P型半导体材料和N型半导体材料,制作P-N结,制作二维和三维集成电路互连结。
- phase discriminator type detector 鉴相式检波器
- photoelectric separation type detector 光电分离式检测器
- gold-silicon surface barrier type detector 金-硅面垒型探测器
- Takes Japanese MITSUBISHI FX series and OMRON C series P type PLC as examples, simply analyzes the status of three PLC parts which related with outside circuit, the design of hardware circuit is given. 以日本三菱FX系列、欧姆龙C系列P型PLC为例 ,简要分析PLC与外部电路有联系的三部分情况 ,提出此方面的硬件电路设计
- In this controller the immnity control is composed of a P type immunity feedback controller, a control increment module and an intelligent controller for regulating immunity feedback rule. 其中 ,免疫控制器包括一个P型免疫反馈控制器、一个控制增量模块和一个用于调节免疫反馈规律的智能调节器。
- Accordingly,the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms:the drift-diffusion,pure drift and thermionic emission currents,have been analyzed theoretically. 并以此为依据,从理论上分别分析和比较了多子漂移扩散、纯漂移和热电子发射电流机制所起的作用。
- Brass is an alloy of copper and zinc. 黄铜是铜和锌的合金。
- Brass is formed by the fusion of copper and zinc. 黄铜是由铜和锌熔合制成的。
- The oxygen react vigorously with the impurity in the iron. 氧气与铁中的杂质发生剧烈的化学反应。
- An alloy composed of lead, tin, and zinc. 铅锡锌化合物由铅、锡和锌组成的一种合金
- p type channel MOS intergrated circuit p沟MOS集成电路
- P type PVC waterproof rolled sheet making plant P型pvc高分子防水
