Hydrogen bonding configurations, Si/N and Si dangling bond densities in PECVD Si3N4 films have been measured as the function of the processing conditions and annealing temperatures in nitrogen atmosphere with IR, RBS and ESR.

• 用红外光谱、背散射能谱和电子自旋共振波谱研究了不同淀积条件下生长的PECVD氮化硅膜中的氢键,Si/N比和硅悬挂键。