It is also found that High C/F atom ratio for source gases, low deposition pressure and high microwave input power contribute to enhancement of cross-linked structure in a-C:F:H films and thus improve the thermal stability of the films.

• 实验中还发现，源气体较高的碳氟原子比、较低的沉积气压和较高的微波输入功率有助于a-C：F：H薄膜交联结构的增强，因而有利于改善薄膜的热稳定性。