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- N沟MOS集成电路N-channel MOS integrated circuit
- 埋沟MOS结构buried-channel MOS structure
- P沟道和N沟道MOS场效应管的辐照实验研究Study of power MOSFET under irradiation condition
- 难熔金属栅MOS集成电路refractory metal gate MOS integrated circuit
- MOS集成电路ESD保护技术研究Study on the ESD Protection Technology of MOS IC
- n沟道场效应晶体管n-channel transistor
- 用它可进行MOS集成电路的直流分析和瞬态分析。It is possible to do DC analysis or transient analysis for MOS IC.
- n沟肖特基势垒隧穿晶体管特性研究Study of n-Type Schottky Barrier Tunneling Transistor Characterizations
- 首先通过分析总结典型的短沟MOS器件模型的建模原理和适用范围，建立了适用于深亚微米、超深亚微米LDD NMOSFET的简捷器件模型(Compact model)。In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit.
- 表面n沟CCD的电离辐射损伤Ionizing Radiation Damage in n-Surface Channel CCD
- 乳沟cleavage
- 沟道groove
- 按模n计数count modulo n
- 互补-MOS型集成电路CMOS
- 电缆沟cable pit
- s-o-n-g拼成"song"一字。s-o-n-g spells "song".
- 按模数N校验modulo n check
- 深沟球轴承deep groove ball bearing
- 管沟pipe drain
- 提高MOS中小规模集成电路管芯成品率的几点措施Some Measures to Increase the Yield of MOS, SSI and MSI Chips
