The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit.

• 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。