The profiling of the compositions and impurities have been measured in SiC:H film, organic film, SiN:H film, SiO2 target, LaBaCuO super-conductor film, GaN target, CHN/Si target etc with the technique mentioned above.

• 应用以上技术测量了SiC：H薄膜、有机膜、SiN：H薄膜、SiO_2靶、LaBaCuO超导膜、GaN靶CHN/Si靶等多种样品的成分及杂质的深度分布。