Then we use Si wafer as substrate to grow InN QDs, and then AlN buffer layer will grow under high temperature(about 1050 oC) onto substrate, finally, InN QDs will grow internally onto buffer layer.

• 以单晶矽晶圆做为成长氮化铟量子点之基板，接著在高温下(约1050度C)成长氮化铝缓冲层，最后用间歇性的方式成长氮化铟量子点。