With various reaction time, silicon film thickness and adhesion layer, we measured the resistivity, adhesion and grain size.Meanwhile, we fabricated the poly-silicon/Ta/SiO2/Si structure.

• 其次我们以置换法沈积铜种子层，研究在不同置换时间、矽膜厚度及附著层，其电阻率、附著力、结晶晶相及晶粒大小。