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- The Choice of Growth Technology for HgCdTe Epitaxial Growth by MOCVD MOCVD外延碲镉汞薄膜的生长工艺选择
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- Chapter Two devotes to study the epitaxial growth of ultra-thin metal films. 第三章:用动力学蒙特卡罗模拟研究表面剂诱导外延中二维岛的形成。
- BST thin films sol gel technique epitaxial growth electrical properties. 标 签 薄膜 溶胶-凝胶工艺 外延生长 电性能.
- In this paper, we presented the epitaxial growth of CeO2 thin film on cube textured Ni5W substrates by MOD method. 本文采用MOD方法,以有机铈盐配制前驱溶液,在立方织构的Ni-5%25(原子分数)W基底上制备了CeO2过渡层。
- Meanwhile, the increase of liquid content also can promote both epitaxial growth of template and formation of textures. 同时液相含量的增加还有利于模板的外延生长以及织构组织的形成;
- Research Interests: Surface science; Semi-conductor physics, Scanning tunneling microscopy, Surface atomic and molecular dynamics; Mechanism of epitaxial growth. 研究兴趣:表面科学、半导体物理、扫描穿隧显微术、表面原子、分子动态学、磊晶成长机制。
- Habelitz S,H?che T,Hergt R,et al.Microstrctural Design through Epitaxial Growth in Extruded Mica Glass-ceramics[J].Acta Mater.,1999,47(9):2831. 马新沛;李光新;沈莲;等.;一种新型云母玻璃陶瓷的切削行为与显微结构[J]
- And epitaxial growth, the future production of new power projects will also be effective to enhance the company's investment income. 而外延增长方面,未来新发电项目的投产也将有效提升公司的投资收益。
- The growth technology for Eu doped YSO single crystals of high optical quality are discussed in this paper. 使用设备是一台中频感应加热炉。
- Nucleation and growth behavior of two dimensional islands in early stage of surfactant-mediated epitaxial growth have been studied by Kinetic Monte Carlo (KMC) simulation. 运用动力学蒙特卡罗(KMC)方法研究了表面剂诱导外延中岛的早期形核和生长行为。
- Both the effects of oxygen pressure and growth temperature on epitaxial growth of Er2O3 on Si(001) substrates are discussed based on the possible chemical reactions. 基于生长过程中可能的化学反应,我们对衬底温度和氧气分压给Er2O3单晶薄膜生长造成的影响也进行了系统的研究。
- High bright blue LED wafers were obtained by optimizing the nitrides growth technology and wafer structure. 通过设计并优化外延片多层结构,生长的蓝光LED外延片质量达到了目前国际上商品化的中高档水平。
- With the network and to promote the development of the economy, extensive epitaxial growth is bound to be intensive growth in the alternative connotations. 随着网络化的推进与发展,经济的粗放型外延增长必将被集约型内涵增长所替代。
- The author discussed the recent use,economic results,growth technology and expand prospect of Betula Luminifera. 对光皮桦资源的利用现状、经济效益、造林技术及发展前景进行了论述。
- The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. 用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。
- The clear and bright streak lines in RHEED patterns proved the epitaxial growth of LAO/BTO superlattices, and a series of satellite peaks in XRD patterns showed the formation of multilayer structure. 由于超晶格薄膜的性能决定于生长和结构,因此,在薄膜生长过程中,我们首先利用高能电子衍射技术(RHEED)对LAO/BTO 超晶格薄膜的生长进行研究,然后再利用X 射线衍射技术对其结构进行分析。
- Widespread use of ferroelectric films depends on preparation of films with better properties, higher preferred orientation, epitaxial growth, improved homogeneity and controlled configuration. 摘要制备性能优良、高度择优取向或外延生长、成分均匀、结构可控的晶态铁电薄膜材料,是发展铁电薄膜应用的基础。
- In this dissertation, we present soft x-ray spectroscopic measurements and epitaxial growth of manganese and cobalt oxides to investigate their orbital ordering and electron correlations. 本论文系结合电子能谱技术及脉冲式雷射薄膜成长技术,来探讨锰氧化物与钴氧化物的轨域极化与电子关联。
- The growth technology for Eu doped YSO single crystals of high optical quality are discussed in this paper. The YSO boules were grown with approxi mately 35mm in diameter and 130mm in length and weighed 460g. 文中讨论了高光学质量掺Eu离子Y2SiO5单晶体的生长工艺,已生长的晶体毛坯直径达35mm,长130mm、质量为460g、光学质量良好。