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- 功率MOSFET器件power MOSFET device
- 采用硅栅结构的自对准离子注入工艺，研制成功了源漏击穿电压BVDS为120V、输出功率5.1W、功率增益8dB、跨导650mS、截止频率fT为270MHz的高压双栅功率MOSFET器件。A high voltage power MOSFET with double Si gate is developed using self aligned ion implantation process. The fabricated device has a BV DS of 120 V, an output power of 5.1 W, a power gain of 8 dB, a transconductance of 650 mS and an f T of 270 MHz.
- 将氧化层厚度作为可调参数 ,用这个经验公式可以很好地拟合超薄氧化物 n MOSFET器件的直接隧穿电流 .This expression can be used to calculate the DT current for nMOSFETs with ultra thin oxide when the oxide thickness is considered as an adjustable parameter.
- 功率MOSFETpower MOSFET
- 纳米级MOSFET器件模拟的载流子输运模型The Carrier Transport Model of Nano-Scale MOSFET Device Simulation
- 摘要推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
- 功率MOSFET管power MOSFET
- 额定功率power rating
- 电机功率power of motor
- 功率MOSFET模块power MOSFET module
- 最大功率ultimate output
- 总功率gross power
- 输入功率input power
- 发射功率launching power
- 硅功率器件Si power device
- 视在功率apparent output
- 该器件将霍尔发电机、小型信号放大器、稳定斩波特性、锁存和MOSFET输出整合在单硅片上。This device includes, on a single silicon chip, a Hall-voltage generator, a small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.
- 轴功率shaft power
- 装机功率installed power
- 低功率underpower
