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- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展，阐述了等离子体刻蚀的物理机制与前沿问题.
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- Progress of scanning probe lithography and study on scanning plasma etching technology 扫描探针加工技术的新进展及扫描等离子体加工技术的研究
- Plasma etching technology 等离子体刻蚀技术
- The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反应腔拥有在RIE(反应离子刻蚀)模式和等离子刻蚀模式下工作的能力。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab-built ECR plasma etching system. 摘要电子迴旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- This thesis considers the delamination behaviors between substrate and molding compound for Ball Grid Array (BGA) products caused by the plasma etching process. 中文摘要本文针对阵列锡球封装产品基板和胶饼间所产生的分层作研究。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab built ECR plasma etching system. 电子回旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- The mechanism of anisotropic etching the construction design of silicon anisotropic etching and two-side etching technology to produce microaccelerometer have been discussed in the paper. 本文讨论了各向异性腐蚀的机理；硅的各向异性腐蚀设计；双面光刻等与微硅加速度计有关的超精细加工问题。
- New type of magnetic sensitivity transistor is based on SOI,whose design principle and process are expatiated,and whose recombination region is set by anisotropic etching technology in MEMS. 构成新型磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。
- We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating.The performance is evaluated by measuring the reflectance spectrum and contact angle. 实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
- A dry etch technology for poly-silicon using Cl2, SF6 and N2 mixed gas has been developed on Tegal 1512e. Different effects of positive resist mask for LDD and SiO2 mask for SST on the process are discussed. 在Tegal1512e设备上,采用Cl_2、SF_6、N_2混合气体,开发了多晶硅干法腐蚀工艺,讨论了LDD的正胶掩膜及SST的SiO_2掩膜对工艺的不同影响。
- An in-situ particle monitor was installed on a plasma etch tool chamber.This article includes a discussion of two major problems detected on the plasma etch tool within a three-week period. 在等离子体蚀刻工具主舱内安装一个现场粒子监测器,对两个主要问题进行了三周的测试并展开了讨论。
- Etching Technology of Refractory Metals Multilayer 多层难熔金属的刻蚀工艺技术研究
- The Research on Plasma Etching Photoresists 等离子体腐蚀去胶的探讨
- deep reaction ion etching technology 深刻蚀技术
- with no need of etching technology 无刻蚀
- inductively coupled plasma etching 电感耦合等离子体刻蚀
- radial flow plasma etching reactor 径向两等离子体腐蚀装置
- The etching technologies of ITO films suitable for laboratory operation, including gelatinization, border scouring, exposal, development, etching and so on ,are obtained after a series of experiments. 通过大锖实验摸索了一套适合实验室制作刻蚀ITO膜的工艺，其中包括涂胶、擦边、曝光、显影、刻蚀等。
