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The dislocation free crystal growth based on heavily B doped seeds without Dash necking was introduced. The mechanical properties, the oxygen and the void defects of heavily B doped Czochralski silicon were also discussed. 主要内容包括重掺B硅单晶的基本性质 ,利用重掺B籽晶进行无缩颈硅单晶生长技术 ,重掺B硅单晶的机械性能 ,重掺B硅单晶中的氧和氧沉淀 ,以及B的大量掺杂与大直径直拉硅单晶中空洞型 (Void)原生缺陷的控制关系。
To verify this method, we fabricated artificial transmission lines on a Si substrate. 为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
SiGe epilayers were grown on Si substrate by UHV/CVD. The epilayers were studied by SIMS and XPS. 系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。
Adopting Ni/Si and TiN/Ni/Si structure , the NiSi film on the <100> Si substrate by the means of RTA has been demonstrated in detail. 文中详细的阐述了采用Ni/Si和TiN/Ni/Si结构通过RTA在硅单晶衬底上制备NiSi薄膜的方法。
The adhesion between conductor and Si substrate was at the order of MPa, which was equivalent with the traditional printing process. 利用悬挂法测定其与硅基板的结合强度在兆帕数量级，与传统丝网印刷工艺相当。
The characteristics and requests of micromachining for silicon based sensors are introduced.The conventional methods of si substrate microfabrication are briefly described. 叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. 中文摘要本论文探讨以热蒸镀法，在P型矽基板上蒸镀沉积N型氧化锌薄膜，并以高温炉管做热处理，进行P-N二极体之制作。
MoSi2 thin film with single tetragonal phase and low resistivity is successfully prepared on (001) Si substrate at normal temperature and 0.3Pa sputtering pressure. 在基体温度为常温、溅射气压为0.;3Pa下，在硅基体上成功制备了单相低电阻率的MoSi2薄膜。
On the even and smooth pure diamond, covered filmed optional growing technology is used to direction-fixed deposit four B doped diamond resistance to form Wegence electric bridge to prepare the self-compensated pressure sensor CMOS chip. 在平整、光滑本征金刚石膜上，利用掩膜法选择性生长技术，定向沉积4个掺硼金刚石膜电阻，形成惠斯顿电桥，制成自补偿压力传感器芯片。
A new method for large-scale synthesis of Si nanowires was found, which employed solid Si substrate instead of the external silicon source as the Si source. 这种方法不需要外来硅源；首次实现了利用硅衬底自身作为硅源，原位生长纳米线；这种直接生长方法还可望与目前的硅材料工艺兼容；
In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate. 本论文利用自主研发的Si电子束蒸发器和建立的分子束外延设备，在Si衬底上外延生长出了表面平整的Si单晶薄膜。
The simulation result shows that complementary ISFET/MOSFET pair can eliminate temperature drift and Si substrate bulk effect, which proves it is a suitable readout circuit for ISFET integration. 模拟仿真的结果表明，所采用的ISFET/MOSFET“互补对”结构的信号读取电路形式能够抑制“温漂”和克服“矽衬底体效应”对器件测量灵敏度的影响，是一种适用于ISFET集成设计的信号读取方式。
Optoelectronic characteristics of doped Si nanowires 掺杂硅纳米线的光电特性
THE CHARACTER ISTICS AND MECHANISM OF LUMINESCENCE FROM Er DOPED Si 掺铒硅的发光特性及机理
Louise was heavily doped before the operation. 露易丝在开刀前被施用很重的麻醉药。
The research of inductors on a Si substrate 硅基微电感的研究
The company was heavily in hock to the banks. 这家公司欠了银行大笔借款。
Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. 引用该论文赵家龙;高瑛;刘学彦;窦恺;黄世华;虞家琪;梁家昌;高鸿楷.
The flight was heavily overbooked. 该班机订位已超员。
The ship was rolling heavily to and fro. 那船晃来晃去很不平稳。