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- high resistivity Si substrate 高阻硅衬底
- high resistivity Si single crystal 高阻硅单晶
- MoSi2 thin film with single tetragonal phase and low resistivity is successfully prepared on (001) Si substrate at normal temperature and 0.3Pa sputtering pressure. 在基体温度为常温、溅射气压为0.;3Pa下,在硅基体上成功制备了单相低电阻率的MoSi2薄膜。
- To verify this method, we fabricated artificial transmission lines on a Si substrate. 为了验证这种方法,我们在硅基片上构造出虚拟的传输线。
- Having relatively high resistance to flow. 粘滞性的对流动有较高抵抗力的
- SiGe epilayers were grown on Si substrate by UHV/CVD. The epilayers were studied by SIMS and XPS. 系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。
- Adopting Ni/Si and TiN/Ni/Si structure , the NiSi film on the <100> Si substrate by the means of RTA has been demonstrated in detail. 文中详细的阐述了采用Ni/Si和TiN/Ni/Si结构通过RTA在硅单晶衬底上制备NiSi薄膜的方法。
- The adhesion between conductor and Si substrate was at the order of MPa, which was equivalent with the traditional printing process. 利用悬挂法测定其与硅基板的结合强度在兆帕数量级,与传统丝网印刷工艺相当。
- High resistance to white interference. 高抗白光干扰能力。
- The characteristics and requests of micromachining for silicon based sensors are introduced.The conventional methods of si substrate microfabrication are briefly described. 叙述了硅基传感器微机械加工的特点和要求,简要说明了硅衬底微细加工的常用方法。
- In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. 中文摘要本论文探讨以热蒸镀法,在P型矽基板上蒸镀沉积N型氧化锌薄膜,并以高温炉管做热处理,进行P-N二极体之制作。
- Evaluation of High Resistivity Reservoir in complex Water System in FL Depression. FL凹陷复杂水系下高电阻率储层油气评价技术。
- A new method for large-scale synthesis of Si nanowires was found, which employed solid Si substrate instead of the external silicon source as the Si source. 这种方法不需要外来硅源;首次实现了利用硅衬底自身作为硅源,原位生长纳米线;这种直接生长方法还可望与目前的硅材料工艺兼容;
- At depths of around 2000 to 2250 feet there are several peaks of high resistivity. 在深度大约2000到2250英尺之间有几个电阻率的高峰值。
- This article particularize the experimental results on low resistivity oil zone and high resistivity water zone. 文章分别列举了该方法在低阻油层、高阻水层等方面的实验研究结果。
- Inductor on high resistive wafer has better performance than it on low resistive wafer because the currents induced in the substrate are reduced. 电感在高阻值基材上会比在低阻值基材上有更好的效能,主要是因为减低基材内的各种感应电流。
- High resistivity materials plates means that the resistivity is far more than that of the metal plates. 高电阻率收尘极板是指收尘极板的电阻率远远大于金属极板的极板。
- In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate. 本论文利用自主研发的Si电子束蒸发器和建立的分子束外延设备,在Si衬底上外延生长出了表面平整的Si单晶薄膜。
- Substances having very high resistance are called insulators . 电阻很高的物质叫做绝缘体。
- The simulation result shows that complementary ISFET/MOSFET pair can eliminate temperature drift and Si substrate bulk effect, which proves it is a suitable readout circuit for ISFET integration. 模拟仿真的结果表明,所采用的ISFET/MOSFET“互补对”结构的信号读取电路形式能够抑制“温漂”和克服“矽衬底体效应”对器件测量灵敏度的影响,是一种适用于ISFET集成设计的信号读取方式。