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- ion implanted mos device 离子注入金属氧化物半导体掐
- ion implantation MOS integrated circuit 离子注入MOS集成电路
- ion implanted mos 离子注入金属氧化物半导体
- Therefore the existing measurement te chniques and interface parameter extraction methods for the MOS capac itor can be directly applied to an SIS capacitor. SIMOX SOI wafers produced by ion implant processes we re used in this experiment. 传统的MOS电容结构测试电学特性应用到SOI圆片是有其局限性的,在本实验中直接利用SOI圆片的SIS(Silicon-Insulator-Silicon)结构,将SOI圆片的无损电学表征方法应用到实际的表征当中去。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文从不同方面对BF_2~-注入MOS管低剂量率辐照效应进行了深入的研究。
- The review ofour work includes: ion implanted contact, ion beam sputtering diposition hardfilm on beryllium and lubricate film on steel and so on. 即离子注入、子束混合、种离子束淀积等技术的研究和应用。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- In this paper,the volume expansion in B ion implanted Ib type diamond has been studied and the origin has been analyzed. 本文对B离子注入合成Ib型金刚石薄膜后体积膨胀现象进行了研究,分析了引起体积膨胀的可能因素及原因。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究结果显示，降低无电镀镀浴之组成：如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因，均将使钯膜粒径减小，分布均匀。而所得元件之二极体电性愈佳。
- A light-sensitive polymer material removed which is used as a mask etching and ion implant steps. 一种暴露于紫外线光即产生聚合作用之抗蚀感光原料，用于化学蚀刻.
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是针对鳍状场效电晶体元件做一个简介，说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来，并提出一个三闸鳍状场效电晶体元件。
- This paper introduces the applied investigation of tribology capability of recoil and mixing ion implanted tin-bronze moving part of oil allocating pair of hydraulic pumb. 论述了对液压泵配流副中施行离子反冲注入混合处理的锡青铜动件的摩擦学性能的实验研究。
- Mutagenic Effect of Ion Implanting on Gluconobacter Oxydans[J]. 引用该论文 吕树娟;王军;姚建铭.
- Effects of the Ion Implantation on Castanea mallissime BL[J]. 引用该论文 项艳;刘正祥;胡蕙露;张良富.
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数，我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。
- A comprehensive study has been performed on the phase compositions, element distributions and binding states of the N + B ion implanted layer by means of X- ray diffraction(XRD), Auger electron spectroscopy(AES) and X- ray photoelectron spectroscopy(XPS). 用X-射线衍射(XRD)、俄歇电子能谱(AES)和X-光电子能谱(XPS)的方法对N+B离子注入层的相组成、元素的分布和元素的结合状态进行了综合考察。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 当金氧半元件缩小至深次微米区域，矽氧化层的厚度也随之变薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合电荷泵的基础上提出了一种8(7)管4倍电荷泵。
- With Si ion implantation, the implanted layer is microcrystal.With Ti ion implantation, the implanted layer is amorphous. 英文摘要： The microstructure of implanted layer of H13 steel after Si and Ti ion implantation was studied.
