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- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层-在绝缘层下部的晶圆片,是顶部硅层的基础。
- Hot plate with silicon wafer lowered to heating position. 加热板与矽晶圆降低至加热位置。
- Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片-用于测试的晶圆片。
- Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污颗粒-晶圆片表面上的颗粒。
- Hot plate with silicon wafer in initial configuration (before heating). 加热板与矽晶圆在启始状态(加热前)。
- SiO2, an insulator, can be formed by oxidation of surface of the silicon wafer. 经净化的晶棒接著用机械方法切成薄片.;这些切片就叫做晶圆
- A New Method of Resistless Photochemical Etching for Silicon Wafer[J]. 引用该论文 杨杰;刘焰发;村原正隆.
- Third Order Nonlinear Optical Properties of Bacteriorhodopsin Langmuir-Blodgett Multilayer Film[J]. 引用该论文 祁春媛;刘康俊;黄燕萍;钱士雄.
- Therefore, a new nanocrystalline/microcrystalline diamond (NCD/MCD) multilayer film has been deposited and studied in this thesis. 因此，本论文研制了纳米晶/微晶金刚石多层膜。
- A covalently attached photoalignment film based on self-assembled multilayer film was prepared by twice irradiation of UV light. 通过两次光照法制备了一种基于共价键结构的自组装光控取向膜。
- Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. 沾污区域-部分晶圆片区域被颗粒沾污,造成不利特性影响。
- The results show that the precise dimple grinding method is a proper method to evaluate the antiwear properties of thin film coatings.TaN/NbN nano multilayer film shows a bett... 结果表明 ,精密凹坑研磨仪是一种适用于评价薄膜镀层耐磨性的方法。
- ICs, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer. 光刻技术应用到集成电路制造中，就是将掩模版的几何图形转移到硅片表面的工艺过程。
- Chip: The individual circuit or component of a silicon wafer, the leadless form of an electronic component. 芯片:单回路或元件的硅晶元,无引脚的电子元件。
- Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 测试晶圆片-用于生产中监测和测试的晶圆片。
- The surfactant-capped CdS nanoparticulate multilayer film has been fabricated by the Langmuir-Blodgett technique. CdS LB film was investigated by Fourier transform infrared spectroscopy, small angle X-ray diffraction, XPS and atomic force microscopy. 采用 LB膜技术制备了表面活性剂包埋的硫化镉纳米粒子多层膜 ,并利用傅里叶红外光谱、X射线光电子能谱、原子力显微镜和小角 X射线衍射对其结构进行了表征。
- The influences of technology parameters on silicon wafer surface quality when slicing are studied theoretically. 对锯切硅片时各工艺参数对切片表面质量的影响规律进行了理论研究。
- Due to the diffusion of amorphous carbon in interface layer, the structure of Mo/Si/C multilayer film was changed, and the double diffraction peaks during low-angle X-ray diffraction (LAXD) were observed. 同时,由于非晶C在高温条件下的扩散导致薄膜结构发生变化,观测到薄膜的小角衍射曲线中出现并临的双衍射峰结构。
- A silicon wafer with micro channels and a pyrex glass with hot films have been bonded to form this sensor. 采用硅微加工技术制作微管道,在玻璃上通过溅射方法形成钛铂合金热膜,最后将两者键合封装,形成埋置了热膜的封闭微管道。
- Ellipsometer is widely used in the field of studying the thickness, refracive index, extinction coefficient of the multilayer film and some optical properties of graded layer are also given. 主要研究变角度变波长椭圆偏振仪测量多层膜每层膜厚和光学特性,并给出了光学梯度薄膜的梯度特性。
