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- neuron MOS devices 神经元MOS器件
- Keywords mixed-signal processing;bandpass sampling;quadrature transform;neuron MOS device;CMOS operational amplifier;DS-CDMA;acquisition performance; 混合信号处理;带通采样;正交变换;神经元MOS器件;CMOS运算放大器;直扩码分多址;捕获性能;
- Then a novel multi-valued flip-flop is designed based on the improved clock-controlled neuron MOS transistor. 然后采用此改进的钟控神经MOS管设计了一种新型多值触发器。
- The clock-controlled neuron MOS transistor is investigated firstly, and its improved technique is proposed in this paper. 摘要首先对钟控神经MOS管进行研究,提出了相应的改进方法。
- Based on the investigation of the neuron MOS transistor, this paper proposes a new method for designing the multi-valued D/A and A/D converter. 摘要通过对神经MOS晶体管特性的研究,提出了一种多值D/A、A/D转换器设计的新方案。
- As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. 当金氧半元件缩小至深次微米区域,矽氧化层的厚度也随之变薄。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Finally the thesis discusses a fourfold voltage charge pump only has 8 MOS devices, even 7 MOS. 本文在6管交叉耦合电荷泵的基础上提出了一种8(7)管4倍电荷泵。
- The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper. 本文从不同方面对BF_2~-注入MOS管低剂量率辐照效应进行了深入的研究。
- MOS devices have to suffer from ionizing radiation as they are widely used in theenvironment of space, nuclear energy and nuclear weapon. 随着航天技术、核能技术及其核武器等高技术的迅速发展,越来越多的MOS器件需要在电离辐射环境中工作。
- First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices. 首先,增加了处理速度和功能密度的需求,推动IC制造者进一步缩减MOS装置的最小尺寸。
- The New Voting Circuit Research on Neuron MOS 新型神经元MOS多数表决电路的研究
- The Latest Development of Neuron MOS Transistors 神经元晶体管的研究进展
- clock-controlled neuron MOS transistor 钟控神经MOS管
- This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage curve by suitably arranging the parameters of the MOS devices. 经由适当的设计MOS元件的参数,我们可以在 其电流-电压特性曲线上得到负微分电阻的特性。
- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- As compared with the MS structured device, the MOS device exhibits more perfect interface, because the oxide layer can effectively prevent the interdiffusion of Pd and GaAs. 研究结果显示,降低无电镀镀浴之组成:如整体镀浴浓度、前驱盐浓度、还原剂浓度等变因,均将使钯膜粒径减小,分布均匀。而所得元件之二极体电性愈佳。
- In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device. 第一章主要是针对鳍状场效电晶体元件做一个简介,说明鳍状场效电晶体元件如何从传统的金氧半元件演化而来,并提出一个三闸鳍状场效电晶体元件。
- Reduction of Gate Current in Nanoscale MOS Devices 减少纳米MOS器件栅电流的研究分析
- Radiation Effects of MOS Devices at Low Dose Rate 低剂量率下MOS器件的辐照效应