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TECHNIQUE AND RESERARCH PROGRESS OF ORGANIC MOLECULAR BEAM EPITAXY 有机分子束外延技术与研究进展
organic molecular beam epitaxy 有机分子束外延
Metal organic molecular beam epitaxial growth system 有机金属分子束磊晶生长系统
Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated. 本实验研究利用激光分子束外延法 (L%25DMBE)研究在SrTiO3(STO) (0 0 1)基片上生长的BaTiO3(BTO) /SrTiO3(STO)超晶格的微结构 .
The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. 本篇论文探讨分子束磊晶成长砷化铟/砷化镓量子点的特性随著不同砷化镓空间层的成长温度或成长速率的变化。
Especially, laser molecular beam epitaxy (L-MBE) plays an important role in the preparing of high quality nanometer thin films and in layer by layer growth of superlattice. 指出脉冲激光沉积技术在探讨激光与物质相互作用和薄膜成膜机理方面的作用，尤其是激光分子束外延技术在高质量的纳米薄膜和超晶格人工设计薄膜的制备上显现出的巨大潜力。
In this dissertation, we studied the growth of Sb-containing compound semiconductor materials and devices by using solid source molecular beam epitaxy (SSMBE). 摘要:本篇论文中研究以固态源分子束磊晶法成长含锑化合物半导体材料与元件。
The ZnTe/ZnMnSe quantum dots (QDs) were grown by the molecular beam epitaxy (MBE) and the coverages of ZnTe are 1.8, 2.2, 2.4, 2.7, and 3.0 monolayers (MLs). 碲化锌/硒化锰锌量子点是以分子束磊晶系统成长，碲化锌覆盖厚度分别为1.;8、2
ZnO thin films can be deposited by various methods, such as sputtering, e-beam evaporation, spray pyrolysis, sol-gel, pulsed laser deposition (PLD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), etc. 制备ZnO薄膜的方法有很多，包括：溅射方法(sputtering)、金属有机气相外延(MOVPE)、分子束外延(MBE)、脉冲激光沉积(PLD)、原子层外延(ALE)、等离子体加强化学气相沉积(PECVD)、溶胶-凝胶法(soll-gel)、喷涂热解法(spray pyrolysis)、电子束蒸发法(e-beam evaporation)等等。
Suitable polycrystalline ZnS x Se 1- x film with (111) preferential growth orientation that provided a good matching with the requirements of LCLV were deposited on ITO coated glass by molecular beam epitaxy (MBE). 采用分子束外延技术在ITO导电玻璃上制备了具有 (111)面定向生长结构的ZnSxSe1-x多晶薄膜 ,通过控制反应时的生长参数 ,制备出了符合器件设计要求的光敏层薄膜。