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- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展，阐述了等离子体刻蚀的物理机制与前沿问题.
- The reactor is capable of working in the RIE (reactive ion etching) mode and also in the plasma etching mode. 反应腔拥有在RIE(反应离子刻蚀)模式和等离子刻蚀模式下工作的能力。
- Dow etching: A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法:陶氏化学公司发明的一种无粉腐技巧。用来制造活版印版。
- Dow etching A powerless etching technique for letter-press plates invented by Dow Chemical Corporation. 陶氏腐法陶氏化学公司发明的一种无粉腐技巧。用来制造活版印版。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab-built ECR plasma etching system. 摘要电子迴旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- This thesis considers the delamination behaviors between substrate and molding compound for Ball Grid Array (BGA) products caused by the plasma etching process. 中文摘要本文针对阵列锡球封装产品基板和胶饼间所产生的分层作研究。
- Diagnostic test with Langmuir probe of the electron cyclotron resonance (ECR) plasma source was modified to evaluate our lab built ECR plasma etching system. 电子回旋共振(ECR)等离子体以其密度高、工作气压低、均匀性好、参数易于控制等优点在超大规模集成电路工艺中获得了广泛的应用。
- It is necessary to measure Young's modulus of micro-mained materials because of the special manufacture process by using silicon etching technique. 摘要利用蚀刻矽技术制造的微机械构件，由于特殊的制作工艺而需要对其材料的杨氏模量进行测量。
- Lising KOH anisotropic wet etching technique to obtain the V-shape structure of fiber array.This technique apply precrision alignment to control undercut effective. 利用KOH非等向性湿蚀刻技术，得到光纤阵所需之V型凹槽结构，并配合精确对准光罩之应用，有效控制侧蚀量，应用于光纤阵列晶圆制程技术。
- In this thesis, etched walls with verticality of better than 89? and Root-mean-Square (RMS) surface roughness of below 10 nm are achieved by using non-switched Inductivity Coupled Plasma (ICP) etching technique. 论文采用无切换的电感耦合等离子体刻蚀(ICP)技术在SOI材料上刻蚀出垂直度好于89°、均方根表面粗糙度小于10nm的刻蚀侧壁。
- We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating.The performance is evaluated by measuring the reflectance spectrum and contact angle. 实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
- An in-situ particle monitor was installed on a plasma etch tool chamber.This article includes a discussion of two major problems detected on the plasma etch tool within a three-week period. 在等离子体蚀刻工具主舱内安装一个现场粒子监测器,对两个主要问题进行了三周的测试并展开了讨论。
- It is necessary to measure the mechanical properties such as Yong's modulus of micro\|machined materials because of the special manufacturing process by using silicon etching technique. 利用蚀刻硅技术制造的微机械构件,由于特殊的制作工艺而需要对其材料的机械性能如杨氏模量等进行测试。
- Three potentials pertinent to various etching techniques are labeled in Fig. 10. 与各种蚀刻技术有关的三个电势标出在图10中。
- Produces relief plates for letterpress printing by photo-mechanical and washout or etching techniques. 运用照相复制及腐蚀技术制备凸版以供印刷。
- The Research on Plasma Etching Photoresists 等离子体腐蚀去胶的探讨
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- Etching Techniques by an ECR Plasma Source 电子回旋共振等离子体的刻蚀技术
- inductively coupled plasma etching 电感耦合等离子体刻蚀
- A type of transistor in which very thin barriers ( by means of etching techniques ) are used, thus permitting the frequency range to be extended to 100 MHz. 使用很薄势垒的一类晶体管(采用刻蚀技术),因而,其使用频率范围可达100兆赫。
