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- After glow Microwave plasma enhanced CVD system 隔离行微波等离子体增强型CVD系统
- Multiple parallel plate electrode plasma enhanced CVD system 多平行电极等离子体增强型
- Preparation of B-N Films by Remote Microwave Plasma Enhanced CVD from Borazine B_3N_3H_6微波等离子体增强化学气相沉积B－N薄膜
- plasma enhanced CVD 等离子体增强CVD
- DLC films were deposited by capacitively coupled radio frequency plasma enhanced chemical vapor deposition. 顶层DLC膜用容式耦合射频等离子体增强化学气相沉积方法制备。
- A example of new approaches to functionalization of nonwovens using plasma enhanced modification of nonwovens was presented. 介绍一种运用等离子处理来改善非织造材料表面性能的新方法。
- Without doping,plasma enhanced chemical vapor deposition (PECVD) of silica films on Si substrates with gas mixtures of SiH_4 and N_2O is considered. 以硅烷和氧化二氮作为反应气体,采用等离子体增强化学气相沉积(PECVD)技术,不使用掺杂,在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
- However, high cost, complicated ductwork, and assistant equipments such as plasma enhancing and electron cyclotron resonance are usually involved in most conventional atmospheric pressure CVD apparatus. 1) 搭建了三套低成本的CVD装置，它们分别是简单CVD装置，单一源化学气相淀积装置，ZnO薄膜的水汽外延装置。
- Fluorinated diamond-like carbon(F-DLC) films were grown by RF plasma enhanced chemical vapor deposition(PECVD) in a gas mixture of CF4 and CH4 and annealed in Ar environment. 以CF4和CH4为源气体,利用射频等离子体增强化学气相沉积法,在不同条件下制备了氟化类金刚石(F-DLC)薄膜,并进行了退火处理。
- The a-Si films is deposited by plasma enhanced chemical vapor deposition technique with the optimum technology.The AC resistively of sample is measured. 用化学气相沉积法在最佳工艺条件下制备了非晶硅薄膜,测量了样品的交流电阻率。
- Nitrogen doped fluorinated diamond-like carbon(FN-DLC)thin films is deposited using radio frequency plasma enhanced chemical vapor deposition under different radio-frequency power with CF_4,CH_4 and N_2 as source gases. 以CF4;CH4和N2为源气体;采用射频等离子体增强化学气相沉积法;在不同射频功率下制备了含氮氟化类金刚石薄膜样品.
- The application and features of vaccum strip coating processes such a thermal jet evaporation, magnetron sputtering, electron-beam evaporation and plasma enhanced EB evaporation process were reviewed. 摘要介绍了新一代连续带钢镀膜技术－真空镀膜的工艺特点及应用现状。
- Using plasma enhanced chemical vapor deposition system, intrinsic hydrogenated nanocrystalline silicon films and P-doped ones have been fabricat ed. The dependence of Raman shift on the grain size and doping concentration has been systemically studied. 通过等离子增强化学气相沉积法 ;制备了本征和掺磷的氢化纳米硅薄膜 (nc- Si:H) ;研究了晶粒尺寸和掺杂浓度对纳米硅薄膜喇曼谱的影响 .
- The vertically aligned carbon nanotubes( CNTs) were synthesized on Au/Ni catalyst films by plasma enhanced hot filament chemical vapor deposition( PE HFCVD) method at 96% concentration of hydrogen. 以金镍复合膜作催化剂,在96%25的高氢气浓度下实现了碳纳米管的定向生长,并对其生长过程进行了深入探讨。
- Stretchable Si films were prepared on single crystal Si wafer with plasma enhance chemical vapor deposition(PECVD). 利用等离子辅助化学气相沉积方法在单晶硅基底表面制备出可延展的硅薄膜。
- plasma enhanced chemical vapor deposition 等离子体增强化学气相沉积
- plasma enhanced chemical vacuum deposition (PECVD) 等离子体增强化学气相沉积
- plasma enhanced chemical vapor deposition (PCVD) 等离子体增强化学气相沉积（PCVD）
- plasma enhanced chemical vapor deposition(PECVD) 等离子体增强化学气相沉积
- plasma enhanced chemical vapour deposition 等离子体增强化学沉积
