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- pre epitaxial growth 外延前生长
- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- Chapter Two devotes to study the epitaxial growth of ultra-thin metal films. 第三章：用动力学蒙特卡罗模拟研究表面剂诱导外延中二维岛的形成。
- BST thin films sol gel technique epitaxial growth electrical properties. 标 签 薄膜 溶胶-凝胶工艺 外延生长 电性能.
- In this paper, we presented the epitaxial growth of CeO2 thin film on cube textured Ni5W substrates by MOD method. 本文采用MOD方法,以有机铈盐配制前驱溶液,在立方织构的Ni-5%25(原子分数)W基底上制备了CeO2过渡层。
- Meanwhile, the increase of liquid content also can promote both epitaxial growth of template and formation of textures. 同时液相含量的增加还有利于模板的外延生长以及织构组织的形成；
- Research Interests: Surface science; Semi-conductor physics, Scanning tunneling microscopy, Surface atomic and molecular dynamics; Mechanism of epitaxial growth. 研究兴趣：表面科学、半导体物理、扫描穿隧显微术、表面原子、分子动态学、磊晶成长机制。
- Habelitz S,H?che T,Hergt R,et al.Microstrctural Design through Epitaxial Growth in Extruded Mica Glass-ceramics[J].Acta Mater.,1999,47(9):2831. 马新沛;李光新;沈莲;等.;一种新型云母玻璃陶瓷的切削行为与显微结构[J]
- And epitaxial growth, the future production of new power projects will also be effective to enhance the company's investment income. 而外延增长方面，未来新发电项目的投产也将有效提升公司的投资收益。
- Nucleation and growth behavior of two dimensional islands in early stage of surfactant-mediated epitaxial growth have been studied by Kinetic Monte Carlo (KMC) simulation. 运用动力学蒙特卡罗(KMC)方法研究了表面剂诱导外延中岛的早期形核和生长行为。
- Both the effects of oxygen pressure and growth temperature on epitaxial growth of Er2O3 on Si(001) substrates are discussed based on the possible chemical reactions. 基于生长过程中可能的化学反应，我们对衬底温度和氧气分压给Er2O3单晶薄膜生长造成的影响也进行了系统的研究。
- With the network and to promote the development of the economy, extensive epitaxial growth is bound to be intensive growth in the alternative connotations. 随着网络化的推进与发展，经济的粗放型外延增长必将被集约型内涵增长所替代。
- The clear and bright streak lines in RHEED patterns proved the epitaxial growth of LAO/BTO superlattices, and a series of satellite peaks in XRD patterns showed the formation of multilayer structure. 由于超晶格薄膜的性能决定于生长和结构,因此,在薄膜生长过程中,我们首先利用高能电子衍射技术(RHEED)对LAO/BTO 超晶格薄膜的生长进行研究,然后再利用X 射线衍射技术对其结构进行分析。
- Widespread use of ferroelectric films depends on preparation of films with better properties, higher preferred orientation, epitaxial growth, improved homogeneity and controlled configuration. 摘要制备性能优良、高度择优取向或外延生长、成分均匀、结构可控的晶态铁电薄膜材料，是发展铁电薄膜应用的基础。
- In this dissertation, we present soft x-ray spectroscopic measurements and epitaxial growth of manganese and cobalt oxides to investigate their orbital ordering and electron correlations. 本论文系结合电子能谱技术及脉冲式雷射薄膜成长技术，来探讨锰氧化物与钴氧化物的轨域极化与电子关联。
- Carbon material for epitaxial growth on Si wafer 硅晶片外延生长用炭材料
- Multiscale Modeling in Epitaxial Growth 取向附生增长中的多种标度建模
- At present the prevailing epitaxial growth techniques of GaN are Metalorganic Chemical Vapor Deposition (MOCVD), Molecule Beam Epitaxy (MBE) as well as HVPE. 目前GaN的外延生长技术一般采用有机金属化学气相外延法(MOCVD)，在蓝宝石衬底的(0001)面上外延生长GaN材料，另外还有分子束外延技术(MBE)及卤化物汽相外延技术(HVPE)等。
- The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient. 如果杂质的扩散系数很小，杂质在外延层中的深度分布是均匀的。
- The main impediment to growth is a lack of capital. 影响发展的主要障碍是缺乏资本。
