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- ternary compound semiconductor 三元化合物半导体
- The compatibility in a ternary compound system that composed of xylene (70%),alkyd resin and chlorinated polypropylene (CPP) has been studied. 研究了由70%25二甲苯、醇酸树脂和氯化聚丙烯(CPP)组成的三元体系复配液的相容性。
- Zinc oxide is a II-VI wide band-gap (3.3eV) compound semiconductor with wurtzitecrystal structure. 氧化锌(ZnO)是一种具有六方结构的II-VI族宽带隙半导体材料;室温下带隙宽度高达3.;3 eV。
- Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
- The results indicate that there form six binary intermetallics in the Ni Pt Ta system at 1? 423 K, which are Pt 3Ta, Ni 3Ta, Pt 2Ta, Ni 2Ta, NiTa and NiTa 2. Ni 3Ta and Pt 3Ta form a line compound (Ni,Pt) 3Ta, but no ternary compound is observed. 测得Ni Pt Ta三元扩散偶中有 6个二元化合物 :Pt3 Ta ;Pt2 Ta ;Ni3 Ta;Ni2 Ta;NiTa和NiTa2 .;Ni3 Ta与Pt3 Ta形成了一个有较小固溶度的线性化合物 (Ni;Pt) 3 Ta;未发现三元中间化合物
- Comparing to conventional NDR device, the resonant-tunneling-diode (RTD) device is fabricated by the technique of compound semiconductor. 与传统的负微分电阻元件相比 较，共振穿透二极体是经由化合物半导体的技术来制作。
- In this dissertation, we studied the growth of Sb-containing compound semiconductor materials and devices by using solid source molecular beam epitaxy (SSMBE). 摘要:本篇论文中研究以固态源分子束磊晶法成长含锑化合物半导体材料与元件。
- For the first time, a standard CMOS technology can offer gain, bandwidth, and power performances comparable to advanced compound semiconductor technologies (SiGe, GaAs, InP). 第一次利用CMOS技术所设计的宽频放大器可达到增益、频宽、输出功率可以与高阶的化合物半导体技术（矽化锗、砷化镓、磷化铟）。
- The Company: South Epitaxy Corporation (SEC) founded in March 2000, is dedicated to be the best compound semiconductor epi-wafer manufacturer in the world. 公司：元砷光电科技股份有限公司（SEC）成立于2000年3月，立志成为全世界最优秀的化合物半导体磊晶片制造商。
- As for ternary compounds, by different choice of the chemical composition of Zn, Cd and Se powder,we can obtain uiform (Zn,Cd)Se thin films in proper technical conditions. 对于三元化合物，我们通过选取不同比例的Zn、Cd、Se粉末，选择合适的工艺条件可得到均匀的(Zn,Cd)Se薄膜。
- Application: Sulphuric acid, fertilizer, papermaking, dynamite and rubber. It is also used for the manufacture of II-VI compound semiconductor, photoelectric devices and etc. 主要用途:硫酸，化肥，造纸，炸药和橡胶。也用于生产II-VI半导体，光电装置等。
- Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication. 氮化铟材料拥有0.;7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。
- Study on flash point experiment of ternary compound liquid 三元混合液体闪点的实验研究
- ternary compounding oil displacement 三元复合驱
- group iii v compound semiconductor material 族化合物半导体材料
- Keywords ternary compound oil drive;coalescent oil removal;wastewater reuse; 三元复合驱采石油;聚结除油;废水回用;
- intermetallic compound semiconductor 金属间化合物半导体
- At Takachiho, we supply various organometallics for compound semiconductors and silicon-based semiconductors. 在高千穗，我们供应化合物半导体以及硅派半导体使用的有机金属材料。
- compound semiconductor interface 化合物半导体界面
- compound semiconductor photodiode 复合半导体光电二极管
