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- 深亚微米pMOS器件deep submicron pMOSFET' s
- 深亚微米器件Deep submicron device
- 考虑界面态电荷高斯分布模型以及Poole-Frenkel效应,对SiC MOSFET补偿电流源模型进行了修正,分析了造成6H-SiC NMOS与PMOS器件补偿电流源变化的原因.The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect.
- 动态电子束探针检测技术在亚微米和深亚微米IC失效分析中的应用研究Study of dynamic electron-beam probe techniques in submicron and deep submicron IC
- 深亚微米槽栅PMOSFET几何结构参数对抗热载流子特性的影响INFLUENCE OF GEOMETRICAL STRUCTURE PARAMETERS ON HOT-CARRIER-EFFECT IN DEEP-SUBMICRON GROOVED GATE PMOSFET
- 人工神经网络在解深亚微米MOSFETs反型层量子效应模型中的应用Solving a Model of Inversion Layer Quantization Effects in Deep Submicron MOSFETs with Artificial Neural Networks
- 一种基于灵敏放大器的新型触发器及其通过伪PMOS动态技术的速度改进Novel General-Purpose Sense Amplifier-Based Flip-Flop and Its Further Speed Improvement by Pseudo-PMOS Dynamic Technique
- 宾夕法尼亚Pennsylvania
- 当工艺水平发展到深亚微米级,互连线时延比重已经占据总时延的绝大部分。As the technology proceeds to DSM, the delay of interconnect has been the dominant portion in all delays.
- 欧亚大陆Eurasia
- 深亚微米槽栅NMOSFET结构参数对其抗热载流子特性的影响Study on the Influence for Structure Parameters on the Hot-Carrier-Effect Immunity in NMOSFET
- 用可见激光在聚(氨酯-酰亚胺)表面制备周期性亚微米结构Preparation of Periodic Sub-micrometer Structure by Visible Laser on Poly(urethane-imide) Surface
- 亚微米PYXSubmicron PYX
- 亚微米直径光纤Submicro-diameter optical fiber
- W亚微米管加热电极W sub-micron tube
- 亚微米SiCp/Al基复合材料Sub-micrometer SiCp/Al composites
- 迎接亚微米技术时代的到来Greet the Advent of the Era of Sabmicron Technology
- 三氧化钼亚微米带的制备与表征PREPARATION AND CHARACTERIZATION OF MOLYBDENUM TRIOXIDE SUB-MICROBELTS
- 类球形亚微米碳化硅粉体的制备PREPARATION OF SPHERE-LIKE SUBMICRON SILICON CARBIDE POWDER
- 亚微米级NiS空心球的水热法合成Preparation of hollow NiS submicrometer spheres by hydrothermal method
