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- MESFET肖特基结Schottky contact
- 蓝宝石上硅膜(SOS)肖特基结注入电流检测的电子自旋共振及Si/Al_2O_3界面缺陷ESR of Silicon Film on Sapphire Detected by Injected Current and the Defects on the Si/Al_2O_3 Interface
- 氮化镓肖特基结紫外探测器的异常特性测量Abnormal characteristic measurement of GaN Schottky junction UV detectors
- 结knot
- 对硅化钯-P型硅肖特基势垒二极管(SBD)的界面性质作了AES谱和EBIC像分析,估算了Pd_xSi_y层厚度和肖特基结的结深。The interface property of palladium silicide-silicon (P-type) Schottky Barrier Diode (SBD)has been studied by AES spectrum and EBIC image. The thickness of Pd_x Si_y layer and the deepness of schottky "junction" are estimated.
- 结汇surrender of exchange
- MESFET功放管MESFET power amplifying tube
- 结帐to settle accounts
- SiC-MESFET器件的夹断电压Investigation of the pinch off voltage of SiC-MESFET
- 月结monthly closing
- MESFET脉冲微波功率放大器microwave pulsed power amplifier
- 中国结Chinese knot
- 肖特基二极管schottky diode
- 基于ADS的MESFET功率放大器设计MESFET Power Amplifier Design Based on ADS Software Fool
- 结清settle
- 低噪声GaAs MESFET有源层的Si~+注入Si~+ Implantation for Low Noise GaAs MESFET Active Layer
- 肖特基Schottky
- 18GHz最小噪声系数1.7dB GaAs MESFET18GHz GaAs MESFETs with 1.7dB NF min
- 结点crunode
- 低噪声铝栅MESFET能量烧毁性质的实验分析Experimental Analysis of the Energy Burnout Property for the Low Noise AI-Gate MESFET
