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- Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭-由多晶或单晶形成的圆柱体,晶圆片由此切割而成。
- Solar cell components, the use of single crystal silicon and polysilicon and amorphous silicon solar cells monomer. 太阳能电池组件，采用单晶硅和多晶硅及非晶硅太阳能电池单体。
- The morphology evolution of single crystal silicon wafers in the hydrothermal process was investigated. 详细研究了铁钝化多孔矽水热制备过程中单晶矽片表面的形貌演化。
- This shows that the impact ionizationeffect increasewith the decreasing of silicon film thickness. 这说明,随着硅膜厚度的减小,器件内部的碰撞离化效应增加。
- A kind of flexible glass capillary wool degras column modified by silicon film was researched. 本文研究了一种硅膜改性弹性玻璃毛细管羊毛脂色谱柱。
- Differing from these general photovoltaics which traditionally chose the crystal silicon as its prime material, TFPV canbe working in the weak light. 与许多常规的光伏采用结晶硅不同，TFPV能在弱光条件下工作。
- The diamond turning surface of single crystal silicon and germanium appears distribution feature alternate with brightness and darkness. 单晶硅、锗的超精密车削表面存在明暗相间的分布特征。
- Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 顶部硅膜-生产半导体电路的硅层,位于绝缘层顶部。
- Diamond like carbon (DLC) films on single crystal silicon and other substrats were produced by low energy ion beam deposition. 研究了利用低能离子束技术，在单晶硅片等多种基体表面形成类金刚石薄膜（DLC膜）。
- Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 顶部硅膜厚度-顶部硅层表面和氧化层表面间的距离。
- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层-在绝缘层下部的晶圆片,是顶部硅层的基础。
- By the double-level recombination model,the statistics formulas of the deep level and lifetime are derived for neutron-irradiated single crystal silicon. 由双能级复合理论，推导了中子辐照单晶硅的深能级复合中心和寿命的计算公式；
- Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature. 在室温下,用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同厚度的非晶碳膜。
- The processing parameters for manufacturing amorphous silicon film were studied.The polycrystalline silicon film was obtained by annealing the amorphous silicon film. 研究了制备性能优良非晶硅薄膜的工艺参数,对薄膜进行高温退火得到多晶硅薄膜。
- In this report, the porous silicon formed by anodization of crystal silicon was studied by positron annihilation technique (PAT) and scanning electron microscopy (SEM). 用正电子湮没技术和扫描电子显微镜研究了阳极氧化法制备的多孔硅材料。
- With various reaction time, silicon film thickness and adhesion layer, we measured the resistivity, adhesion and grain size.Meanwhile, we fabricated the poly-silicon/Ta/SiO2/Si structure. 其次我们以置换法沈积铜种子层，研究在不同置换时间、矽膜厚度及附著层，其电阻率、附著力、结晶晶相及晶粒大小。
- Many experimental phenomena show that the primary Si content affects the primary crystal silicon distribution in hypereutectic Al-Si alloy functionally gradient matrial (FGM) prepared by centrifugal casting. 很多实验表明,Si含量不同导致离心法制备过共晶Al-Si合金梯度功能材料(FGM)中初晶硅分布内外侧不同。
- The wear mechanisms of monocrystalline diamond cutting tool in ultra-precision single point diamond turning of aluminum alloy, OFHC copper and single crystal silicon were investigated by carrying out single point diamond turning test. 通过金刚石单点切削试验 ,考察了对无氧铜、铝合金和单晶硅进行超精密单点切削时金刚石刀具的磨损行为 ;
- Every series breed specification , high efficiency solar energy producing single crystal silicon , polycrystal silicon and amorphous silicon vanquish the large-scale module and chip only. 生产单晶硅、多晶硅和非晶硅各系列品种规格、高效率的太阳能光伏大型组件及微型组件。
