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- The reason is that their valence band is full of electrons, which obstructs current flow. 因为它们的价带填满了电子，使电流无法流动。
- The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band. 填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。
- In the band structure, one band that is completely filled with electrons is termed valence band. 在能带结构中,完全填满电子的带被称为价带。
- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 这是因为外加伸展应力使得矽的价电带往上移动以及导电带向下移动造成。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
- The upshift of valence band edge under mechanical strain increases the majority hole concentration at the oxide/Si interface. 价电带的向上移动会使得氧化层以及矽的接面的电洞浓度增加。
- By developing the spV tight-binding model, we study the band spectrum feature of the cagelike structure such as carbon clusters, carbon nanotubes, BN nanotubes in this thesis. 本论文发展sp~3s~*紧束缚模型，着重研究笼状纳米结构如碳巴基球、碳纳米管、纳米氮化硼管的能谱特征。
- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。
- It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively. 认为1.;447eV和1
- A modified approach base on raised cosine impulse cancellation is proposed, which could effectively reduce PAPR with minimum out of band spectrum regrowth. Simulation results were also provided. 提出了一种基于升余弦脉冲峰值抵消的改进方案,在降低系统峰平比的同时避免削波引入的频谱恶化,给出了理论分析及相应的仿真结果与结论。
- The differences of ecosystem coupling relation characteristics in arid zone can be found by water-heat condition, land-scape band spectrum, microclimate effects and factitious activities, and so on. 干旱区生态系统耦合关系的特征差异表现在水热状况、景观带谱、小气候效应以及人为活动等方面。
- Electronic structure analysis shows that the doping S could substantially lower the band gap of TiO_2 by the presence of an impurity state of S3p on the upper edge of valence band. 对TiO_(2-x)S_x的电子结构分析表明，其带隙相对于未掺杂TiO_2有所减小，这是由S3p杂质态在价带上边沿的出现造成的。 可以推断，由S3p杂质态到导带的跃迁造成了实验观测到的S掺杂TiO_2吸收边沿的红移。
- While the cycling performance of the anode can improve due to the structural stabilization of the material Li 5Mn 7CoO 8 corresponding to the decrease of the valence band width and enhancement of the Co-O bond. 同时由于价带宽度变窄 ;Co-O键间的相互作用比Mn -O键间的相互作用强 ;所以 ;结构稳定性增加 ;电极循环性能改善 .
- The absorption edge increases as the amount of fluorine is raised. The optical energy gap E g is mainly determined by CF bond in the films, which results in the change of the density of states in band tail of the valence band. 薄膜中氟的引入对吸收边和光学带隙产生较大的影响 ,吸收边随氟含量的提高而增大 ,光学带隙则主要取决于CF键的含量 ,是由于强电负性F的引入改变了价带带尾附近带隙中态密度的结果所至
- Charge carriers in semiconductors come in two flavors: conduction electrons, which are electrons in the conduction band, and valence holes, which are electrons missing from the valence band. 半导体内的电荷载子也有两种：一种是传导带中的传导电子，另一种是价带中因失去电子而产生的价电洞。
- continuous frequency band spectrum 连续频(带)谱, 连频谱
- Valence band photoemission of Sm fullerides Sm富勒烯的价带光电子能谱
- Test results are analyzed in one third octave band spectrums mainly regarding vibration-sensitive instruments and emphasizing on low frequency band. 测试结果的分析主要是针对振动敏感仪器的，在频域内采用1/3倍频程频谱，重点考虑低频段的地面响应。
- The X-ray diffraction (XRD), excitation, emission and phonon side band spectra of the upper and lower parts of crystals were measured. 测定了晶体下部与上部的X射线衍射图(XRD)、激发光谱、荧光光谱以及声子边带谱。
- They form four discrete levels outside the conduction and valence bands: one locates near the battom of the conduction band and one near the top of conduction bunt, another two are symmetrically near the valence band. 它们形成分立的能级,并分别位于导带的顶部和底部以及价带的顶部和底部。
