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- In the band structure, one band that is completely filled with electrons is termed valence band. 在能带结构中,完全填满电子的带被称为价带。
- Solution of Kohn-Luttinger Hamiltonian Equation in Energy Representation for Valence Band Structures of Strain-compensated Multiple Quantum Wells 方程的能量表象求解方法
- Electronic structure analysis shows that the doping S could substantially lower the band gap of TiO_2 by the presence of an impurity state of S3p on the upper edge of valence band. 对TiO_(2-x)S_x的电子结构分析表明，其带隙相对于未掺杂TiO_2有所减小，这是由S3p杂质态在价带上边沿的出现造成的。 可以推断，由S3p杂质态到导带的跃迁造成了实验观测到的S掺杂TiO_2吸收边沿的红移。
- Investigations of Semiconductor Band Structure Using High Pressure. 应用高压对半导体键联结构的研究。
- The reason is that their valence band is full of electrons, which obstructs current flow. 因为它们的价带填满了电子，使电流无法流动。
- The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band. 填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。
- Stir cylinder liner for the band structure, mixer body is long life. 搅拌筒为带衬板结构,搅拌机架体使用寿命长。
- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 这是因为外加伸展应力使得矽的价电带往上移动以及导电带向下移动造成。
- This program calculates the 2D photonic Band Structure with PWE method. (译)：此程序计算了二维光子带结构PWE方法。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
- Two Dimensional Photonic Band Structure: Triangular Non Bravais Lattice[J]. 引用该论文 金崇君;秦柏;杨森;秦汝虎.
- The upshift of valence band edge under mechanical strain increases the majority hole concentration at the oxide/Si interface. 价电带的向上移动会使得氧化层以及矽的接面的电洞浓度增加。
- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。
- It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively. 认为1.;447eV和1
- Wave vector resolved surface densities of states and band structure along the surface Brillouin zone are presented. 采用层轨道表象及表面投影技术 ;给出了 (313)表面在二维布里渊区高对称点的波矢分辩的电子态密度和表面投影能带结构 .
- Chuang. This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications. Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。
- Band structure, transmissions and reflections are calculated which indicate the Brewster angle phenomenon. 首先研究了一维台阶体系的能带、透射及反射,指出液体表面波中布儒斯特角的存在是难以实现全方位反射的原因。
- While the cycling performance of the anode can improve due to the structural stabilization of the material Li 5Mn 7CoO 8 corresponding to the decrease of the valence band width and enhancement of the Co-O bond. 同时由于价带宽度变窄 ;Co-O键间的相互作用比Mn -O键间的相互作用强 ;所以 ;结构稳定性增加 ;电极循环性能改善 .
- Band structure of the photonic crystals shows that there exists a partial bandgap. 通过分析这种光子晶体的能带结构，显示其存在部分带隙。
- The absorption edge increases as the amount of fluorine is raised. The optical energy gap E g is mainly determined by CF bond in the films, which results in the change of the density of states in band tail of the valence band. 薄膜中氟的引入对吸收边和光学带隙产生较大的影响 ,吸收边随氟含量的提高而增大 ,光学带隙则主要取决于CF键的含量 ,是由于强电负性F的引入改变了价带带尾附近带隙中态密度的结果所至
