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- To verify this method, we fabricated artificial transmission lines on a Si substrate. 为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
- SiGe epilayers were grown on Si substrate by UHV/CVD. The epilayers were studied by SIMS and XPS. 系统分析了利用超高真空CVD技术在Si衬底上外延Si1-xGex 合金的体内组分分布情况和Ge的表面偏析现象。
- Adopting Ni/Si and TiN/Ni/Si structure , the NiSi film on the <100> Si substrate by the means of RTA has been demonstrated in detail. 文中详细的阐述了采用Ni/Si和TiN/Ni/Si结构通过RTA在硅单晶衬底上制备NiSi薄膜的方法。
- The adhesion between conductor and Si substrate was at the order of MPa, which was equivalent with the traditional printing process. 利用悬挂法测定其与硅基板的结合强度在兆帕数量级，与传统丝网印刷工艺相当。
- The characteristics and requests of micromachining for silicon based sensors are introduced.The conventional methods of si substrate microfabrication are briefly described. 叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
- In this dissertation, we studied the formation of N-type Zinc Oxide ( ZnO ) thin film by thermal evaporated ZnO powder on P-type Si substrate followed by thermal treatment. 中文摘要本论文探讨以热蒸镀法，在P型矽基板上蒸镀沉积N型氧化锌薄膜，并以高温炉管做热处理，进行P-N二极体之制作。
- MoSi2 thin film with single tetragonal phase and low resistivity is successfully prepared on (001) Si substrate at normal temperature and 0.3Pa sputtering pressure. 在基体温度为常温、溅射气压为0.;3Pa下，在硅基体上成功制备了单相低电阻率的MoSi2薄膜。
- A new method for large-scale synthesis of Si nanowires was found, which employed solid Si substrate instead of the external silicon source as the Si source. 这种方法不需要外来硅源；首次实现了利用硅衬底自身作为硅源，原位生长纳米线；这种直接生长方法还可望与目前的硅材料工艺兼容；
- In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate. 本论文利用自主研发的Si电子束蒸发器和建立的分子束外延设备，在Si衬底上外延生长出了表面平整的Si单晶薄膜。
- The simulation result shows that complementary ISFET/MOSFET pair can eliminate temperature drift and Si substrate bulk effect, which proves it is a suitable readout circuit for ISFET integration. 模拟仿真的结果表明，所采用的ISFET/MOSFET“互补对”结构的信号读取电路形式能够抑制“温漂”和克服“矽衬底体效应”对器件测量灵敏度的影响，是一种适用于ISFET集成设计的信号读取方式。
- The research of inductors on a Si substrate 硅基微电感的研究
- Temperature Effect of Deep Center-Related Photoluminescence in GaAs Thin Films Grown on Si Substrates[J]. 引用该论文 赵家龙;高瑛;刘学彦;窦恺;黄世华;虞家琪;梁家昌;高鸿楷.
- Electroplating and direct brushing technique were used to deposit commercial HTHP diamond powder on W needles and Si substrates to form cold cathodes. 采用电镀方法和直接刷涂的方法在钨针衬底和硅衬底上沉积高压合成的金刚石粉末形成冷阴极。
- In the second part of our study, ZnS nanostructures were grown on the Si substrates coated with two metallic layers of Au, Fe, In or Sn. 第二部分则是在矽基板上溅镀金、铁、锡、铟等双层触媒组合并置入系统中成长硫化锌奈米结构。
- This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth. 用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。
- Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates[J]. 引用该论文 高瑛;赵家龙;刘学彦;苏锡安;梁家昌;高鸿楷;龚平;王海滨.
- Without doping,plasma enhanced chemical vapor deposition (PECVD) of silica films on Si substrates with gas mixtures of SiH_4 and N_2O is considered. 以硅烷和氧化二氮作为反应气体,采用等离子体增强化学气相沉积(PECVD)技术,不使用掺杂,在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
- Sb, Ag, Cu, Pd and Ni films deposited on Si substrates were irradiated with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose. 用6MeV F离子束辐照了淀积在Si单晶基底上的Sb、Ag、Cu、Pd和Ni金属薄膜,并用胶带法对不同辐照剂量的各点进行了增强附着阈剂量的测量。
- Polymer Thin Film Growth on Si Substrate ( Ellipsometry ) Si衬底上聚合物薄膜生长(椭圆偏振仪)
- THICKNESS MEASUREMENT OF Sn COATING ON Si SUBSTRATE BY AES 用AES测定Si表面上Sn涂层的厚度
