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- TiO2 porous thin film TiO2多孔薄膜
- TiO2 porous thin film electrode TiO2多孔薄膜电极
- Matlab software was adopted to simulate the equivalent circuit according to the orificial depth and diameter of the porous thin film. 根据孔深孔径的合理取值范围,通过仿真,找出孔高比与面积占空比的最佳值,提高了湿度传感器的灵敏度。
- porous thin film 多孔薄膜
- ordered porous thin film 有序多孔薄膜
- TiO2 porous films were prepared by anodization with different patterns of applied voltage. 摘要采用阳极氧化的方法，通过改变电压的施加方式制备了具有不同形貌的氧化钛薄膜。
- Double-layer SnO2-Fe2o3 and triple - layer SnO2 - TiO2 - Fe2O3 thin film materials have been prepared by means of PECVD method and side-heating sensors fabricated. 采用PECVD方法，分别注积了SnO2-Fe2O3、SnO2-TiO2-Fe2O3等双层和三层气敏薄膜材料，制成了旁热式传感器。
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- nano-erystalline TiO2 porous film electrode 纳晶TiO2多孔薄膜电极
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- Properties of TiO2 thin film were studied by XRD, UV-spectra, measuring the contact angle, measuring the thickness and Methylene Blue degradation experiment. 采用XRD、UV透射光谱、薄膜表面接触角的测量、厚度的测量及亚甲基蓝降解等手段研究了TiO2薄膜的性能.
- The results showed that the formation of TiO2 porous films by anodization was controlled by voltage, barrier thickness when one-step voltage method or continuous voltage method was applied. 研究结果表明，采用一步施加电压和连续施加电压的方法，氧化钛薄膜纳米孔的形成过程由电压、阻挡层的厚度决定；
- Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
- The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
- This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
- Design of Interleaver with Cascaded Thin Film Filter[J]. 引用该论文 陈海星;顾培夫;李海峰;章岳光;沈伟东.
- Moreover, one of the important conditions for the hydrophility of TiO2 thin films is raisonne adsorption centers. 并且二氧化钛薄膜亲水作用的另一个重要条件是吸附中心必须合理分布的观点。
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT／PEK-C were prepared. 制备了纳米复合材料薄膜PT／PEK-C。
