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PLEDs based on MEH-PPV with optimized device structure were obtained. 为了考察载流子注入问题，本文第四章首先以MEH-PPV为发光层，制备了一系列具有不同结构的电致发光器件，系统地研究了载流子传输层的引入对PLED性能的影响，并分析了其内在的发光机制；
An analytical model taking the modulation effect into account is presented to optimize the device structure. 考虑到这种调制效应，提出解析模型用以优化设计该新器件的结构参数。
With the aid of this type of device structure improvements, Graphene FET are higher than the supplies of the switch. 借助此类器件布局方背的鼎新，石墨烯FET无望达不败较矮的开关比摆设耗材。
The influence of the device structure on the distributed Bragg reflector(DBR) reflectivity and the cavity mode reflectivity is calculated and analyzed. 计算分析了布拉格反射镜和谐振腔模的反射谱受器件结构变化的影响。
The device structure of the polymer was ITO /PEDOT/PVK / P3FS/Ba /Al,The external quantum yield of the device reaches 1.99%. 其薄膜PL最大发射峰在516nm;绝对PL效率为86%25;EL峰在542nm;器件结构为ITO/PEDOT/PVK/P3FS/Ba/Al;其EL最大外量子效率达到1.;99%25。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD). 首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。
A new SOI high-voltage device structure with nonuniform thickness drift region (n-uni SOI)and its optimization design method are proposed. 摘要提出非均匀厚度漂移区SOI高压器件新结构及其优化设计方法。
Of course, the way in which progress is made from one data item on the device to the next will depend almost entirely upon device structure. 当然的方式进步由一个数据项被做在对下的设备几乎完全地将取决于设备结构。
Because the lpm function code is the best way to fit the structure of device, which is designed by altera factory specialist who is very familiar with our device structure. （参考译文：可以使用软件里的megawizard(lpm_counter)来生成计数器; 选择带有VHDL的输出语言.;这应该是实现计数器的有效方法;而且不用进行额外的优化
Chapter 1 is an introduction of DPN nitrided gate oxide experiment. The process flow design, device structure and measurement tool are also introduced to realize this experiment. 第一章将针对使用去耦电浆氮化闸极氧化层之背景以及实验规划做个简介，包含元件的制程内容、元件结构及量测仪器，以注明本实验之过程。
The basic device structure is ITO/EL polymer/Al, and the two parts of EL polymer layer in the dual-color device are Si-PPV and CN-PPV/Si-PPV, respectively. 3. 此外，使用两步旋涂的方法，分别以Si-PPV和CN-PPV/Si-PPV为发光层部分，实现了同一块ITO基板上的双色发光。
This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics. 这种技术解决了外延生长难以解决的晶格失配问题，为改善器件结构及性能提供了巨大的潜力。
This article introduces drying technics,drying device structure and characteristics of the ham bowels in the box,lists main desiccation parameters,analyses the drying mechanism and the factor s that influence the dry velocity. 介绍了箱式火腿肠干燥工艺、设备结构及特点,给出了主要的干燥参数,分析了干燥机理和影响干燥速率的因素。
This paper reports a novel Photo-conductive layered solid-state imaging device (PSID) for high definition television (HDTV) camera, where describes the device structure, the performance analysis, and the development technique of the device. 本文介绍的是一种新颖的供高清晰度电视(HDTV)摄像用的光电导涂层固体摄像器件(PSID);阐明了这种图像传感器的器件结构;性能分析;以及制作工艺技术.
After discovering this phenomenon, we will discuss the effect of NDD dose in different device structures in Chapter 4. 在发觉此现象后，第四章则接著讨论不同的元件结构对轻掺杂浓度效应的影响。
Breakdown characteristic of SiCOI (SiC on insulator) MESFET is studied using two-dimensional device simulator,MEDICI. A new type of device structure,SiCOI MESFET with multi-step dielectric groove isolation,is presented. 用二维器件仿真软件 MEDICI对 Si COI(Si C on insulator) MESFET的击穿特性进行了研究 ;提出了一种新的 Si COI MESFET器件介质槽隔离结构 ;即多台阶介质槽隔离结构 .
The NiSi salicidation process is, then, incorporated into the fabrication of novel self-aligned nanowire MOSFET devices structure. 然后镍化矽被应用于新颖的元件结构里--自对准奈米线金氧半场效电晶体。
A display device that uses a cathode ray tube. 一种使用阴极射线管的显示装置。
If took ten men to wrestle the device into place. 用了10个人才把那台装置挪动到位。
Many engineers see nanotubes as an alternative to silicon,the medium in which transistors,diodes and other semiconductor device structures are usually built today. 很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。