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- molecular beam maser 分子束微波激射器
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 缩小分子束(水分子集团)，调整分子结构波动。
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫谱研究了Ge(111)表面与氯分子热反应动态学。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 应用激光多光子电离质谱与超声脉冲分子束技术研究邻氯苯酚-水的混合团簇。
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
- Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. 分子束外延（Molecular beam epitaxy, MBE）是一种在超高真空条件下，使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。
- Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community. 瑞博是一个制造分子束外延设备的公司，其设备在化合物半导体领域处于领先地位。
- The distribution of atomic or subatomic particles in a system, as in a magnetically resolved molecular beam, arranged in order of masses. 能谱：系统（如经磁力分解的分子束）中，原子与亚原子微粒根据质量顺序排定的分布
- The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated. 本实验研究利用激光分子束外延法 (L%25DMBE)研究在SrTiO3(STO) (0 0 1)基片上生长的BaTiO3(BTO) /SrTiO3(STO)超晶格的微结构 .
- The characteristics of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) with different growth temperature of GaAs spacer or growth rates were studied. 本篇论文探讨分子束磊晶成长砷化铟/砷化镓量子点的特性随著不同砷化镓空间层的成长温度或成长速率的变化。
- Especially, laser molecular beam epitaxy (L-MBE) plays an important role in the preparing of high quality nanometer thin films and in layer by layer growth of superlattice. 指出脉冲激光沉积技术在探讨激光与物质相互作用和薄膜成膜机理方面的作用，尤其是激光分子束外延技术在高质量的纳米薄膜和超晶格人工设计薄膜的制备上显现出的巨大潜力。
- Ion species and their energy in the cathode sheath of N 2 abnormal glow discharges with short electrode interval were determined by molecular beam mass spectrometry (MBMS). 利用国内首台三级差分抽空的分子束质谱装置;对短间隙氮异常辉光放电阴极鞘层区正离子组分及能量分布进行了诊断研究.
