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- wet etching technology 湿法腐蚀工艺
- HF-based solution is widely used for cleaning and wet etching SiO2 in pre-diffusion clean process. 摘要以氟化氢为基础的溶液被广泛地用在扩散前清洗工艺中的二氧化矽清洗与蚀刻中。
- Application of LAWE (Laser assisted wet etching) in Microstructure Processing[J]. 引用该论文 周月豪;柳海鹏;熊良才.
- In order to modify the defect of metal mask, we propose to use TMAH anisotropic wet etching process to fabricate thin silicon shadow masks. 为了改善金属遮罩的缺点，我们使用非等向湿蚀刻的方式用(100)矽晶片制作矽材料蒸镀遮罩。
- With the principles and processes of photolithography,dry etching and wet etching,the fabrication of the head slider were experimented. 然后利用光刻、湿法刻蚀和干法刻蚀的工艺及设备,分别进行了该磁头滑块结构的湿法和干法刻蚀试验,给出了刻蚀参数及所加工的磁头照片;
- Lising KOH anisotropic wet etching technique to obtain the V-shape structure of fiber array.This technique apply precrision alignment to control undercut effective. 利用KOH非等向性湿蚀刻技术，得到光纤阵所需之V型凹槽结构，并配合精确对准光罩之应用，有效控制侧蚀量，应用于光纤阵列晶圆制程技术。
- Furthermore, an analysis of a wet etching station in the semiconductor fabrication facilities will be presented to demonstrate the traditional method and the proposed approach. 藉由基因演算法反覆进行取代与淘汰的程序，以搜寻到更佳的可行解。
- The mechanism of anisotropic etching the construction design of silicon anisotropic etching and two-side etching technology to produce microaccelerometer have been discussed in the paper. 本文讨论了各向异性腐蚀的机理；硅的各向异性腐蚀设计；双面光刻等与微硅加速度计有关的超精细加工问题。
- New type of magnetic sensitivity transistor is based on SOI,whose design principle and process are expatiated,and whose recombination region is set by anisotropic etching technology in MEMS. 构成新型磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。
- Abstract: The characteristics and progress of lithography technique and plasma etching technology are summarized.Their physical mechanisms and current research problems are also explained. 文摘:介绍了光刻与等离子体刻蚀技术的特点与进展，阐述了等离子体刻蚀的物理机制与前沿问题.
- Due to the influence of test's error and the roughness of the surface made by the wet etching,the measurement results may be considered to be accordant with the experimental simulation results. 对这种结构的形变特性进行了实验测试,考虑到测量误差与湿法刻蚀造成膜表面的不平整因素,测实结果与模拟结果较为相符。
- A dry etch technology for poly-silicon using Cl2, SF6 and N2 mixed gas has been developed on Tegal 1512e. Different effects of positive resist mask for LDD and SiO2 mask for SST on the process are discussed. 在Tegal1512e设备上,采用Cl_2、SF_6、N_2混合气体,开发了多晶硅干法腐蚀工艺,讨论了LDD的正胶掩膜及SST的SiO_2掩膜对工艺的不同影响。
- Etching Technology of Refractory Metals Multilayer 多层难熔金属的刻蚀工艺技术研究
- The fur collar mats when it gets wet. 皮领子湿了时毛就结在一起。
- LITHOGRAPHY AND PLASMA ETCHING TECHNOLOGY 光刻与等离子体刻蚀技术
- deep reaction ion etching technology 深刻蚀技术
- with no need of etching technology 无刻蚀
- In this dissertation, by mixing benzoic and adipic acid as the source of proton exchange, wet etched ridge waveguides are successfully fabricated in LiNbO3. 摘要:本论文以混合苯甲酸和己二酸作为质子酸源，在铌酸锂基板上进行质子交换溼式蚀刻法制作脊形光波导及元件。
- Studies of Wet Etching of 7740 Glass and Lithography in Grooves 7740玻璃湿法腐蚀凹槽及槽内光刻图形的研究
- The etching technologies of ITO films suitable for laboratory operation, including gelatinization, border scouring, exposal, development, etching and so on ,are obtained after a series of experiments. 通过大锖实验摸索了一套适合实验室制作刻蚀ITO膜的工艺，其中包括涂胶、擦边、曝光、显影、刻蚀等。
