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- 埋沟MOS场效晶体管buried-channel MOSFET
- 埋沟MOS场效晶体管buried-channel MOSFET
- 埋沟MOS结构buried-channel MOS structure
- 双极MOS场效应晶体管BJMOSFET
- 场效晶体管field-effect transistor (FET)
- N沟MOS集成电路N-channel MOS integrated circuit
- 离子敏场效晶体管ion sensitive FET
- 埋bury
- 隐埋沟道buried-channel
- 半场half-court
- 埋沟电荷耦合掐bccd
- 文摘:通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构,对文献[9]中得出的不同的结论和所讨论的问题阐述了自已的见解。Abstract: By theoretical analysis and experiment, it has been proved that injection photodetector is not a MOS field effect structure.
- 首先通过分析总结典型的短沟MOS器件模型的建模原理和适用范围,建立了适用于深亚微米、超深亚微米LDD NMOSFET的简捷器件模型(Compact model)。In this work, one emphasis is put on the nonlinear modeling of LDD MOSFET, wherein the drain current Ids is the key of the MOS equivalent circuit.
- 绝缘栅场效晶体管insulated gate field effect transistor
- 埋沟MOSFETBuried channel MOSFET
- 新的安全措施会见效吗?Will the new security measures bite?
- 流场flow field
- 马跳过了那条沟。The horse jumped over the ditch.
- 片场film studio
- 埋沟N型MOSFETburied channel NMOSFET